Hole-concentration dependence of electrical resistivity in the (Bi, Pb)₂(Sr, La)₂CuO_6+δ quantitative evaluation with angle-resolved photoemission spectroscopy

Relaxation time of Bloch states at the Fermi level (τF), Fermi velocity (vF), and mean free path (lF) of the conduction electrons in the (Bi, Pb) ₂(Sr, La)₂CuO_6+δ (Bi2201) superconductors with various hole-concentration (p) were determined by the angle-resolved photoemission spectroscopy (ARPES) measurement with high energy- and momentum-resolutions; ΔE=10 meV and Δk=0.005 Å^-1. We found that τF at kF along (0,0)-(π,π) cut is kept constant over a wide Hole-concentration range while it in the vicinity of (π,0) is drastically shortened with decreasing p and eventually reaches nearly zero in the under-doped sample with the transition temperature of 27 K. By calculating electrical resistivity and comparing it with the measured one, we confirmed that τF, vF, and lF determined by the ARPES measurement can be used for the quantitative estimation of the electrical transport properties, such as the electrical resistivity, in high-Tc cuprates.