Highly reliable uni-travelling-carrier photodiodes for 40 Gbit/s optical transmission systems

T. Furuta, H. Fushimi, T. Yasui, Y. Muramoto, H. Kamioka, H. Mawatari, H. Fukano, T. Ishibashi, H. Ito

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The reliability of InP/InGaAs uni-travelling-carrier photodiodes has been studied. A failure rate of 42 FIT at 25°C was estimated from long-term bias-temperature stress tests. Stable operations for over 2000 h were also confirmed under higher-power optical input conditions.

Original languageEnglish
Pages (from-to)332-334
Number of pages3
JournalElectronics Letters
Volume38
Issue number7
DOIs
Publication statusPublished - Mar 28 2002
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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