Highly c-axis-oriented AlN film using MOCVD for 5GHz-band FBAR filter

C. M. Yang, Kazuhiro Uehara, S. K. Kim, S. Kameda, H. Nakase, K. Tsubouchi

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We have successfully developed to deposit highly c-axis-oriented aluminum nitride (AlN) film using metal-organic-chemical-vapor deposition (MOCVD). Full-width at half-maximum (FWHM) of the deposited AlN(0002) film whose thickness was 1μm has found to be 2.98°. The value of FWHM means the deposited film has the electromechanical coupling coefficient (K2) of 6.4%. The conditions of deposition were substrate temperature of 1050°C, pressure of 20Torr, and V-III ratio of 25000. Film-bulk-acoustic resonator (FBAR) band-pass filter for 5GHz orthogonal-frequency-division multiplexing (OFDM) wireless local area network (WLAN) system has been designed using the c-axis-oriented AlN film. The designed band-pass filter has the sufficient bandwidth of more than 100MHz, which is evaluated from Butterworth-Van Dyke (BVD) equivalent circuit model of FBAR.

Original languageEnglish
Pages (from-to)170-173
Number of pages4
JournalUnknown Journal
Volume1
Publication statusPublished - 2003
Externally publishedYes

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Acoustic resonators
Aluminum nitride
Organic chemicals
Chemical vapor deposition
Metals
Bandpass filters
Full width at half maximum
Electromechanical coupling
Wireless local area networks (WLAN)
Equivalent circuits
Orthogonal frequency division multiplexing
Film thickness
Deposits
Bandwidth
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yang, C. M., Uehara, K., Kim, S. K., Kameda, S., Nakase, H., & Tsubouchi, K. (2003). Highly c-axis-oriented AlN film using MOCVD for 5GHz-band FBAR filter. Unknown Journal, 1, 170-173.

Highly c-axis-oriented AlN film using MOCVD for 5GHz-band FBAR filter. / Yang, C. M.; Uehara, Kazuhiro; Kim, S. K.; Kameda, S.; Nakase, H.; Tsubouchi, K.

In: Unknown Journal, Vol. 1, 2003, p. 170-173.

Research output: Contribution to journalArticle

Yang, CM, Uehara, K, Kim, SK, Kameda, S, Nakase, H & Tsubouchi, K 2003, 'Highly c-axis-oriented AlN film using MOCVD for 5GHz-band FBAR filter', Unknown Journal, vol. 1, pp. 170-173.
Yang CM, Uehara K, Kim SK, Kameda S, Nakase H, Tsubouchi K. Highly c-axis-oriented AlN film using MOCVD for 5GHz-band FBAR filter. Unknown Journal. 2003;1:170-173.
Yang, C. M. ; Uehara, Kazuhiro ; Kim, S. K. ; Kameda, S. ; Nakase, H. ; Tsubouchi, K. / Highly c-axis-oriented AlN film using MOCVD for 5GHz-band FBAR filter. In: Unknown Journal. 2003 ; Vol. 1. pp. 170-173.
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AU - Nakase, H.

AU - Tsubouchi, K.

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