High temperature piezoresistance properties of 6H-SiC ceramics doped with trivalent elements

Akira Kishimoto; Daisuke Mutaguchi; Hidetaka Hayashi; Yoshimitsu Numata

doi:10.1016/j.mseb.2006.08.050

High temperature piezoresistance properties of 6H-SiC ceramics doped with trivalent elements

Akira Kishimoto, Daisuke Mutaguchi, Hidetaka Hayashi, Yoshimitsu Numata

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Piezoresistance coefficient was measured at room and elevated temperatures on 6H-SiC ceramics doped with different amounts of boron, aluminum or gallium. The piezoresistance coefficient increased with increasing the addition within their solid solution limits. The profile of carrier concentrations, lattice constant and piezoresistance coefficient against doping levels were closely related. In few samples piezoresistance coefficient slightly decreased with measurement temperature.

Original language	English
Pages (from-to)	145-149
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	135
Issue number	2
DOIs	https://doi.org/10.1016/j.mseb.2006.08.050
Publication status	Published - Nov 25 2006

Keywords

Doping effect
Piezoresistance
Silicon carbide

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2006.08.050

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abstract = "Piezoresistance coefficient was measured at room and elevated temperatures on 6H-SiC ceramics doped with different amounts of boron, aluminum or gallium. The piezoresistance coefficient increased with increasing the addition within their solid solution limits. The profile of carrier concentrations, lattice constant and piezoresistance coefficient against doping levels were closely related. In few samples piezoresistance coefficient slightly decreased with measurement temperature.",

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AU - Mutaguchi, Daisuke

AU - Hayashi, Hidetaka

AU - Numata, Yoshimitsu

PY - 2006/11/25

Y1 - 2006/11/25

N2 - Piezoresistance coefficient was measured at room and elevated temperatures on 6H-SiC ceramics doped with different amounts of boron, aluminum or gallium. The piezoresistance coefficient increased with increasing the addition within their solid solution limits. The profile of carrier concentrations, lattice constant and piezoresistance coefficient against doping levels were closely related. In few samples piezoresistance coefficient slightly decreased with measurement temperature.

AB - Piezoresistance coefficient was measured at room and elevated temperatures on 6H-SiC ceramics doped with different amounts of boron, aluminum or gallium. The piezoresistance coefficient increased with increasing the addition within their solid solution limits. The profile of carrier concentrations, lattice constant and piezoresistance coefficient against doping levels were closely related. In few samples piezoresistance coefficient slightly decreased with measurement temperature.

KW - Doping effect

KW - Piezoresistance

KW - Silicon carbide

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High temperature piezoresistance properties of 6H-SiC ceramics doped with trivalent elements

Abstract

Keywords

ASJC Scopus subject areas

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