High temperature piezoresistance properties of 6H-SiC ceramics doped with trivalent elements

Akira Kishimoto, Daisuke Mutaguchi, Hidetaka Hayashi, Yoshimitsu Numata

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Piezoresistance coefficient was measured at room and elevated temperatures on 6H-SiC ceramics doped with different amounts of boron, aluminum or gallium. The piezoresistance coefficient increased with increasing the addition within their solid solution limits. The profile of carrier concentrations, lattice constant and piezoresistance coefficient against doping levels were closely related. In few samples piezoresistance coefficient slightly decreased with measurement temperature.

Original languageEnglish
Pages (from-to)145-149
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume135
Issue number2
DOIs
Publication statusPublished - Nov 25 2006

Fingerprint

High temperature properties
Gallium
Boron
Aluminum
Temperature measurement
Lattice constants
Carrier concentration
Solid solutions
Doping (additives)
ceramics
coefficients
Temperature
gallium
temperature measurement
boron
solid solutions
aluminum
room temperature
profiles
temperature

Keywords

  • Doping effect
  • Piezoresistance
  • Silicon carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

High temperature piezoresistance properties of 6H-SiC ceramics doped with trivalent elements. / Kishimoto, Akira; Mutaguchi, Daisuke; Hayashi, Hidetaka; Numata, Yoshimitsu.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 135, No. 2, 25.11.2006, p. 145-149.

Research output: Contribution to journalArticle

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