Abstract
Piezoresistance coefficient was measured at room and elevated temperatures on 6H-SiC ceramics doped with different amounts of boron, aluminum or gallium. The piezoresistance coefficient increased with increasing the addition within their solid solution limits. The profile of carrier concentrations, lattice constant and piezoresistance coefficient against doping levels were closely related. In few samples piezoresistance coefficient slightly decreased with measurement temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 145-149 |
| Number of pages | 5 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 135 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Nov 25 2006 |
Fingerprint
Keywords
- Doping effect
- Piezoresistance
- Silicon carbide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics
Cite this
High temperature piezoresistance properties of 6H-SiC ceramics doped with trivalent elements. / Kishimoto, Akira; Mutaguchi, Daisuke; Hayashi, Hidetaka; Numata, Yoshimitsu.
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 135, No. 2, 25.11.2006, p. 145-149.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High temperature piezoresistance properties of 6H-SiC ceramics doped with trivalent elements
AU - Kishimoto, Akira
AU - Mutaguchi, Daisuke
AU - Hayashi, Hidetaka
AU - Numata, Yoshimitsu
PY - 2006/11/25
Y1 - 2006/11/25
N2 - Piezoresistance coefficient was measured at room and elevated temperatures on 6H-SiC ceramics doped with different amounts of boron, aluminum or gallium. The piezoresistance coefficient increased with increasing the addition within their solid solution limits. The profile of carrier concentrations, lattice constant and piezoresistance coefficient against doping levels were closely related. In few samples piezoresistance coefficient slightly decreased with measurement temperature.
AB - Piezoresistance coefficient was measured at room and elevated temperatures on 6H-SiC ceramics doped with different amounts of boron, aluminum or gallium. The piezoresistance coefficient increased with increasing the addition within their solid solution limits. The profile of carrier concentrations, lattice constant and piezoresistance coefficient against doping levels were closely related. In few samples piezoresistance coefficient slightly decreased with measurement temperature.
KW - Doping effect
KW - Piezoresistance
KW - Silicon carbide
UR - http://www.scopus.com/inward/record.url?scp=33750445641&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33750445641&partnerID=8YFLogxK
U2 - 10.1016/j.mseb.2006.08.050
DO - 10.1016/j.mseb.2006.08.050
M3 - Article
AN - SCOPUS:33750445641
VL - 135
SP - 145
EP - 149
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 2
ER -