Abstract
Piezoresistance coefficient was measured at room and elevated temperatures on 6H-SiC ceramics doped with different amounts of boron, aluminum or gallium. The piezoresistance coefficient increased with increasing the addition within their solid solution limits. The profile of carrier concentrations, lattice constant and piezoresistance coefficient against doping levels were closely related. In few samples piezoresistance coefficient slightly decreased with measurement temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 145-149 |
| Number of pages | 5 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 135 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Nov 25 2006 |
Keywords
- Doping effect
- Piezoresistance
- Silicon carbide
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Kishimoto, A., Mutaguchi, D., Hayashi, H., & Numata, Y. (2006). High temperature piezoresistance properties of 6H-SiC ceramics doped with trivalent elements. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 135(2), 145-149. https://doi.org/10.1016/j.mseb.2006.08.050