High-speed InP/InGaAs heterojunction phototransistor with emitter metal reflector

H. Fukano, T. Kobayashi, Y. Takanashi, M. Fujimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports the characteristics of InP/InGaAs heterojunction phototransistors (HPTs) in which light is incident through the substrate. These HPTs have a base terminal and a non-alloyed emitter metal reflector that increases the quantum efficiency to 37% regardless of the thin base and collector light-absorbing layers. An optical gain of more than 70 and an optical gain cutoff frequency (fc) of 22 GHz are obtained at the 3×3 μm2 emitter HPT. This HPT has the capability of operating as a high speed heterojunction bipolar transistor (HBT) at the same time. A current gain cutoff frequency (fT) of 128 GHz is obtained for HBTs fabricated on the same wafer.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherPubl by IEEE
Pages213-216
Number of pages4
ISBN (Print)0780314506
Publication statusPublished - Dec 1 1993
Externally publishedYes
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: Dec 5 1993Dec 8 1993

Publication series

NameTechnical Digest - International Electron Devices Meeting
ISSN (Print)0163-1918

Other

OtherProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period12/5/9312/8/93

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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