High-speed InP/InGaAs heterojunction phototransistor with emitter metal reflector

Hideki Fukano, T. Kobayashi, Y. Takanashi, M. Fujimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports the characteristics of InP/InGaAs heterojunction phototransistors (HPTs) in which light is incident through the substrate. These HPTs have a base terminal and a non-alloyed emitter metal reflector that increases the quantum efficiency to 37% regardless of the thin base and collector light-absorbing layers. An optical gain of more than 70 and an optical gain cutoff frequency (fc) of 22 GHz are obtained at the 3×3 μm2 emitter HPT. This HPT has the capability of operating as a high speed heterojunction bipolar transistor (HBT) at the same time. A current gain cutoff frequency (fT) of 128 GHz is obtained for HBTs fabricated on the same wafer.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherPubl by IEEE
Pages213-216
Number of pages4
ISBN (Print)0780314506
Publication statusPublished - 1993
Externally publishedYes
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: Dec 5 1993Dec 8 1993

Other

OtherProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period12/5/9312/8/93

Fingerprint

Phototransistors
Heterojunctions
Optical gain
Heterojunction bipolar transistors
Cutoff frequency
Metals
Quantum efficiency
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Fukano, H., Kobayashi, T., Takanashi, Y., & Fujimoto, M. (1993). High-speed InP/InGaAs heterojunction phototransistor with emitter metal reflector. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 213-216). Publ by IEEE.

High-speed InP/InGaAs heterojunction phototransistor with emitter metal reflector. / Fukano, Hideki; Kobayashi, T.; Takanashi, Y.; Fujimoto, M.

Technical Digest - International Electron Devices Meeting. ed. / Anon. Publ by IEEE, 1993. p. 213-216.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fukano, H, Kobayashi, T, Takanashi, Y & Fujimoto, M 1993, High-speed InP/InGaAs heterojunction phototransistor with emitter metal reflector. in Anon (ed.), Technical Digest - International Electron Devices Meeting. Publ by IEEE, pp. 213-216, Proceedings of the 1993 IEEE International Electron Devices Meeting, Washington, DC, USA, 12/5/93.
Fukano H, Kobayashi T, Takanashi Y, Fujimoto M. High-speed InP/InGaAs heterojunction phototransistor with emitter metal reflector. In Anon, editor, Technical Digest - International Electron Devices Meeting. Publ by IEEE. 1993. p. 213-216
Fukano, Hideki ; Kobayashi, T. ; Takanashi, Y. ; Fujimoto, M. / High-speed InP/InGaAs heterojunction phototransistor with emitter metal reflector. Technical Digest - International Electron Devices Meeting. editor / Anon. Publ by IEEE, 1993. pp. 213-216
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AB - This paper reports the characteristics of InP/InGaAs heterojunction phototransistors (HPTs) in which light is incident through the substrate. These HPTs have a base terminal and a non-alloyed emitter metal reflector that increases the quantum efficiency to 37% regardless of the thin base and collector light-absorbing layers. An optical gain of more than 70 and an optical gain cutoff frequency (fc) of 22 GHz are obtained at the 3×3 μm2 emitter HPT. This HPT has the capability of operating as a high speed heterojunction bipolar transistor (HBT) at the same time. A current gain cutoff frequency (fT) of 128 GHz is obtained for HBTs fabricated on the same wafer.

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