High-Speed InP-InGaAs Heterojunction Phototransistors Employing a Nonalloyed Electrode Metal as a Reflector

Hideki Fukano, Y. Takanashi, M. Fujimoto

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

High-speed InP-InGaAs heterojunction phototransistors (HPT‘s) with a base terminal (three-terminal HPT's) have been fabricated. These HPT's have nonalloyed electrodes functioning as reflectors and a configuration in which light is incident through the substrate. These features lead to an increase in quantum efficiency in spite of the thin base and collector light-absorbing layers. Optical gain dependence on collector current is weak because of the low recombination current at the emitter-base interface. Maximum optical-gain cutoff frequencies of 22 and 14 GHz are obtained for a 3 x 3-μm2 emitter HPT illuminated by 1.3-and 1.55-μm light, respectively. This HPT has the capability of operating as a high-speed heterojunction bipolar transistor (HBT) as well. A current-gain cutoff frequency (fT) of 128 GHz is obtained for a 3 x 9-μm2 emitter HBT fabricated on the same wafer. Equivalent circuit analysis, in which all the components are determined by measuring both the electrical and optical characteristics of a three-terminal HPT, shows good agreement with experimental results.

Original languageEnglish
Pages (from-to)2889-2895
Number of pages7
JournalIEEE Journal of Quantum Electronics
Volume30
Issue number12
DOIs
Publication statusPublished - 1994
Externally publishedYes

Fingerprint

Phototransistors
phototransistors
reflectors
Heterojunctions
heterojunctions
high speed
Optical gain
Electrodes
electrodes
Heterojunction bipolar transistors
Cutoff frequency
Metals
metals
emitters
bipolar transistors
accumulators
cut-off
Electric network analysis
Quantum efficiency
Equivalent circuits

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

High-Speed InP-InGaAs Heterojunction Phototransistors Employing a Nonalloyed Electrode Metal as a Reflector. / Fukano, Hideki; Takanashi, Y.; Fujimoto, M.

In: IEEE Journal of Quantum Electronics, Vol. 30, No. 12, 1994, p. 2889-2895.

Research output: Contribution to journalArticle

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