Abstract
High-speed InP-InGaAs heterojunction phototransistors (HPT‘s) with a base terminal (three-terminal HPT's) have been fabricated. These HPT's have nonalloyed electrodes functioning as reflectors and a configuration in which light is incident through the substrate. These features lead to an increase in quantum efficiency in spite of the thin base and collector light-absorbing layers. Optical gain dependence on collector current is weak because of the low recombination current at the emitter-base interface. Maximum optical-gain cutoff frequencies of 22 and 14 GHz are obtained for a 3 x 3-μm2 emitter HPT illuminated by 1.3-and 1.55-μm light, respectively. This HPT has the capability of operating as a high-speed heterojunction bipolar transistor (HBT) as well. A current-gain cutoff frequency (fT) of 128 GHz is obtained for a 3 x 9-μm2 emitter HBT fabricated on the same wafer. Equivalent circuit analysis, in which all the components are determined by measuring both the electrical and optical characteristics of a three-terminal HPT, shows good agreement with experimental results.
| Original language | English |
|---|---|
| Pages (from-to) | 2889-2895 |
| Number of pages | 7 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 30 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Dec 1994 |
| Externally published | Yes |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering