Abstract
InAIAs/InGaAs heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy (MBE) are fabricated. A cutoff frequency of 32 GHz for a collector current of 20 mA is achieved in the emitter area of 6 x μ 10-m2 devices. The use of heavily doped and nondoped InGaAs layers as the emitter cap and collector, respectively, results in a reduction of the emitter and collector charging times; this, in turn, leads to the higher microwave performance of devices.
| Original language | English |
|---|---|
| Pages (from-to) | 312-314 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 9 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1988 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
High-Speed InAlAs/InGaAs Heterojunction Bipolar Transistors. / Fukano, Hideki; Kawamura, Yuichi; Takanashi, Yoshifumi.
In: IEEE Electron Device Letters, Vol. 9, No. 6, 1988, p. 312-314.Research output: Contribution to journal › Article
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TY - JOUR
T1 - High-Speed InAlAs/InGaAs Heterojunction Bipolar Transistors
AU - Fukano, Hideki
AU - Kawamura, Yuichi
AU - Takanashi, Yoshifumi
PY - 1988
Y1 - 1988
N2 - InAIAs/InGaAs heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy (MBE) are fabricated. A cutoff frequency of 32 GHz for a collector current of 20 mA is achieved in the emitter area of 6 x μ 10-m2 devices. The use of heavily doped and nondoped InGaAs layers as the emitter cap and collector, respectively, results in a reduction of the emitter and collector charging times; this, in turn, leads to the higher microwave performance of devices.
AB - InAIAs/InGaAs heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy (MBE) are fabricated. A cutoff frequency of 32 GHz for a collector current of 20 mA is achieved in the emitter area of 6 x μ 10-m2 devices. The use of heavily doped and nondoped InGaAs layers as the emitter cap and collector, respectively, results in a reduction of the emitter and collector charging times; this, in turn, leads to the higher microwave performance of devices.
UR - http://www.scopus.com/inward/record.url?scp=0346691320&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0346691320&partnerID=8YFLogxK
U2 - 10.1109/55.727
DO - 10.1109/55.727
M3 - Article
VL - 9
SP - 312
EP - 314
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 6
ER -