High-Speed InAlAs/InGaAs Heterojunction Bipolar Transistors

Hideki Fukano; Yuichi Kawamura; Yoshifumi Takanashi

doi:10.1109/55.727

High-Speed InAlAs/InGaAs Heterojunction Bipolar Transistors

Hideki Fukano, Yuichi Kawamura, Yoshifumi Takanashi

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15 Citations (Scopus)

Abstract

InAIAs/InGaAs heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy (MBE) are fabricated. A cutoff frequency of 32 GHz for a collector current of 20 mA is achieved in the emitter area of 6 x μ 10-m2 devices. The use of heavily doped and nondoped InGaAs layers as the emitter cap and collector, respectively, results in a reduction of the emitter and collector charging times; this, in turn, leads to the higher microwave performance of devices.

Original language	English
Pages (from-to)	312-314
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	9
Issue number	6
DOIs	https://doi.org/10.1109/55.727
Publication status	Published - Jun 1988

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ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Fukano, H., Kawamura, Y., & Takanashi, Y. (1988). High-Speed InAlAs/InGaAs Heterojunction Bipolar Transistors. IEEE Electron Device Letters, 9(6), 312-314. https://doi.org/10.1109/55.727

@article{c95850cd398942f0a4d41d3e5ed4c318,

title = "High-Speed InAlAs/InGaAs Heterojunction Bipolar Transistors",

abstract = "InAIAs/InGaAs heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy (MBE) are fabricated. A cutoff frequency of 32 GHz for a collector current of 20 mA is achieved in the emitter area of 6 x μ 10-m2 devices. The use of heavily doped and nondoped InGaAs layers as the emitter cap and collector, respectively, results in a reduction of the emitter and collector charging times; this, in turn, leads to the higher microwave performance of devices.",

author = "Hideki Fukano and Yuichi Kawamura and Yoshifumi Takanashi",

year = "1988",

month = jun

doi = "10.1109/55.727",

language = "English",

volume = "9",

pages = "312--314",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - High-Speed InAlAs/InGaAs Heterojunction Bipolar Transistors

AU - Fukano, Hideki

AU - Kawamura, Yuichi

AU - Takanashi, Yoshifumi

PY - 1988/6

Y1 - 1988/6

N2 - InAIAs/InGaAs heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy (MBE) are fabricated. A cutoff frequency of 32 GHz for a collector current of 20 mA is achieved in the emitter area of 6 x μ 10-m2 devices. The use of heavily doped and nondoped InGaAs layers as the emitter cap and collector, respectively, results in a reduction of the emitter and collector charging times; this, in turn, leads to the higher microwave performance of devices.

AB - InAIAs/InGaAs heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy (MBE) are fabricated. A cutoff frequency of 32 GHz for a collector current of 20 mA is achieved in the emitter area of 6 x μ 10-m2 devices. The use of heavily doped and nondoped InGaAs layers as the emitter cap and collector, respectively, results in a reduction of the emitter and collector charging times; this, in turn, leads to the higher microwave performance of devices.

UR - http://www.scopus.com/inward/record.url?scp=0346691320&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0346691320&partnerID=8YFLogxK

U2 - 10.1109/55.727

DO - 10.1109/55.727

M3 - Article

AN - SCOPUS:0346691320

VL - 9

SP - 312

EP - 314

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 6

ER -

Access to Document

10.1109/55.727