High-Speed InAlAs/InGaAs Heterojunction Bipolar Transistors

Hideki Fukano; Yuichi Kawamura; Yoshifumi Takanashi

doi:10.1109/55.727

High-Speed InAlAs/InGaAs Heterojunction Bipolar Transistors

Hideki Fukano, Yuichi Kawamura, Yoshifumi Takanashi

Research output: Contribution to journal › Article

15 Citations (Scopus)

Abstract

InAIAs/InGaAs heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy (MBE) are fabricated. A cutoff frequency of 32 GHz for a collector current of 20 mA is achieved in the emitter area of 6 x μ 10-m2 devices. The use of heavily doped and nondoped InGaAs layers as the emitter cap and collector, respectively, results in a reduction of the emitter and collector charging times; this, in turn, leads to the higher microwave performance of devices.

Original language	English
Pages (from-to)	312-314
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	9
Issue number	6
DOIs	https://doi.org/10.1109/55.727
Publication status	Published - Jun 1988
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Fukano, H., Kawamura, Y., & Takanashi, Y. (1988). High-Speed InAlAs/InGaAs Heterojunction Bipolar Transistors. IEEE Electron Device Letters, 9(6), 312-314. https://doi.org/10.1109/55.727

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