Abstract
InAIAs/InGaAs heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy (MBE) are fabricated. A cutoff frequency of 32 GHz for a collector current of 20 mA is achieved in the emitter area of 6 x μ 10-m2 devices. The use of heavily doped and nondoped InGaAs layers as the emitter cap and collector, respectively, results in a reduction of the emitter and collector charging times; this, in turn, leads to the higher microwave performance of devices.
Original language | English |
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Pages (from-to) | 312-314 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 9 |
Issue number | 6 |
DOIs | |
Publication status | Published - Jun 1988 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering