High-Speed InAlAs/InGaAs Heterojunction Bipolar Transistors

Hideki Fukano, Yuichi Kawamura, Yoshifumi Takanashi

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

InAIAs/InGaAs heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy (MBE) are fabricated. A cutoff frequency of 32 GHz for a collector current of 20 mA is achieved in the emitter area of 6 x μ 10-m2 devices. The use of heavily doped and nondoped InGaAs layers as the emitter cap and collector, respectively, results in a reduction of the emitter and collector charging times; this, in turn, leads to the higher microwave performance of devices.

Original languageEnglish
Pages (from-to)312-314
Number of pages3
JournalIEEE Electron Device Letters
Volume9
Issue number6
DOIs
Publication statusPublished - Jun 1988
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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