High-Speed InAlAs/InGaAs Heterojunction Bipolar Transistors

Hideki Fukano, Yuichi Kawamura, Yoshifumi Takanashi

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

InAIAs/InGaAs heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy (MBE) are fabricated. A cutoff frequency of 32 GHz for a collector current of 20 mA is achieved in the emitter area of 6 x μ 10-m2 devices. The use of heavily doped and nondoped InGaAs layers as the emitter cap and collector, respectively, results in a reduction of the emitter and collector charging times; this, in turn, leads to the higher microwave performance of devices.

Original languageEnglish
Pages (from-to)312-314
Number of pages3
JournalIEEE Electron Device Letters
Volume9
Issue number6
DOIs
Publication statusPublished - 1988
Externally publishedYes

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Heterojunction bipolar transistors
Cutoff frequency
Molecular beam epitaxy
Microwaves

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

High-Speed InAlAs/InGaAs Heterojunction Bipolar Transistors. / Fukano, Hideki; Kawamura, Yuichi; Takanashi, Yoshifumi.

In: IEEE Electron Device Letters, Vol. 9, No. 6, 1988, p. 312-314.

Research output: Contribution to journalArticle

Fukano, Hideki ; Kawamura, Yuichi ; Takanashi, Yoshifumi. / High-Speed InAlAs/InGaAs Heterojunction Bipolar Transistors. In: IEEE Electron Device Letters. 1988 ; Vol. 9, No. 6. pp. 312-314.
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