High-speed electroabsorption modulators using ruthenium-doped SI-InP

Impact of interdiffusion-free burying technology on E/O modulation characteristics

Munehisa Tamura, Takayuki Yamanaka, Hideki Fukano, Yuichi Akage, Yasuhiro Kondo, Tadashi Saitoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

InGaAlAs/InAlAs electroabsorption (EA) are successfully fabricated modulators using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison between measured and calculated microwave characteristics reveals that no additional microwave loss due to Zn diffusion occurred because of the use of Ru-doped SI-InP layers. A small-signal E/O response with a -3 dB electrical bandwidth of over 50 GHz is demonstrated.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
Pages491-494
Number of pages4
Publication statusPublished - 2003
Externally publishedYes
Event2003 International Conference Indium Phosphide and Related Materials - Santa Barbara, CA, United States
Duration: May 12 2003May 16 2003

Other

Other2003 International Conference Indium Phosphide and Related Materials
CountryUnited States
CitySanta Barbara, CA
Period5/12/035/16/03

Fingerprint

Electroabsorption modulators
Ruthenium
ruthenium
modulators
Microwaves
high speed
Modulation
modulation
microwaves
Modulators
bandwidth
Bandwidth

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Materials Science(all)
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Tamura, M., Yamanaka, T., Fukano, H., Akage, Y., Kondo, Y., & Saitoh, T. (2003). High-speed electroabsorption modulators using ruthenium-doped SI-InP: Impact of interdiffusion-free burying technology on E/O modulation characteristics. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 491-494)

High-speed electroabsorption modulators using ruthenium-doped SI-InP : Impact of interdiffusion-free burying technology on E/O modulation characteristics. / Tamura, Munehisa; Yamanaka, Takayuki; Fukano, Hideki; Akage, Yuichi; Kondo, Yasuhiro; Saitoh, Tadashi.

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2003. p. 491-494.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tamura, M, Yamanaka, T, Fukano, H, Akage, Y, Kondo, Y & Saitoh, T 2003, High-speed electroabsorption modulators using ruthenium-doped SI-InP: Impact of interdiffusion-free burying technology on E/O modulation characteristics. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials. pp. 491-494, 2003 International Conference Indium Phosphide and Related Materials, Santa Barbara, CA, United States, 5/12/03.
Tamura M, Yamanaka T, Fukano H, Akage Y, Kondo Y, Saitoh T. High-speed electroabsorption modulators using ruthenium-doped SI-InP: Impact of interdiffusion-free burying technology on E/O modulation characteristics. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2003. p. 491-494
Tamura, Munehisa ; Yamanaka, Takayuki ; Fukano, Hideki ; Akage, Yuichi ; Kondo, Yasuhiro ; Saitoh, Tadashi. / High-speed electroabsorption modulators using ruthenium-doped SI-InP : Impact of interdiffusion-free burying technology on E/O modulation characteristics. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2003. pp. 491-494
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