High-speed electroabsorption modulators using ruthenium-doped SI-InP: Impact of interdiffusion-free burying technology on E/O modulation characteristics

Munehisa Tamura, Takayuki Yamanaka, Hideki Fukano, Yuichi Akage, Yasuhiro Kondo, Tadashi Saitoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

InGaAlAs/InAlAs electroabsorption (EA) are successfully fabricated modulators using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison between measured and calculated microwave characteristics reveals that no additional microwave loss due to Zn diffusion occurred because of the use of Ru-doped SI-InP layers. A small-signal E/O response with a -3 dB electrical bandwidth of over 50 GHz is demonstrated.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
Pages491-494
Number of pages4
Publication statusPublished - 2003
Externally publishedYes
Event2003 International Conference Indium Phosphide and Related Materials - Santa Barbara, CA, United States
Duration: May 12 2003May 16 2003

Other

Other2003 International Conference Indium Phosphide and Related Materials
CountryUnited States
CitySanta Barbara, CA
Period5/12/035/16/03

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ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Materials Science(all)
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Tamura, M., Yamanaka, T., Fukano, H., Akage, Y., Kondo, Y., & Saitoh, T. (2003). High-speed electroabsorption modulators using ruthenium-doped SI-InP: Impact of interdiffusion-free burying technology on E/O modulation characteristics. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 491-494)