High-speed electroabsorption modulators using ruthenium-doped SI-InP: Impact of interdiffusion-free burying technology on E/O modulation characteristics

Munehisa Tamura, Takayuki Yamanaka, Hideki Fukano, Yuichi Akage, Yasuhiro Kondo, Tadashi Saitoh

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

InGaAlAs/InAlAs electroabsorption (EA) are successfully fabricated modulators using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison between measured and calculated microwave characteristics reveals that no additional microwave loss due to Zn diffusion occurred because of the use of Ru-doped SI-InP layers. A small-signal E/O response with a -3 dB electrical bandwidth of over 50 GHz is demonstrated.

Original languageEnglish
Pages (from-to)491-494
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - Jul 25 2003
Externally publishedYes
Event2003 International Conference Indium Phosphide and Related Materials - Santa Barbara, CA, United States
Duration: May 12 2003May 16 2003

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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