High-speed electroabsorption modulators buried with ruthenium-doped SI-InP

Munehisa Tamura, Takayuki Yamanaka, Hideki Fukano, Yuichi Akage, Yasuhiro Kondo, Tadashi Saitoh

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

InGaAlAs-InAlAs electroabsorption modulators are successfully fabricated using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison of measured and calculated microwave characteristics reveals that there is no additional microwave loss because zinc diffusion is inhibited by the use of Ru-doped SI-InP layers. A small-signal electrooptical response with a -3-dB electrical bandwidth of over 50 GHz is demonstrated.

Original languageEnglish
Pages (from-to)2613-2615
Number of pages3
JournalIEEE Photonics Technology Letters
Volume16
Issue number12
DOIs
Publication statusPublished - Dec 2004
Externally publishedYes

Fingerprint

Electroabsorption modulators
Ruthenium
ruthenium
modulators
Microwaves
high speed
microwaves
Zinc
zinc
bandwidth
Bandwidth

Keywords

  • Electroabsorption (EA) modulators
  • Multiple quantum well (MQW)
  • Optical communication
  • Ruthenium (Ru)
  • Semi-insulating (SI) InP

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

High-speed electroabsorption modulators buried with ruthenium-doped SI-InP. / Tamura, Munehisa; Yamanaka, Takayuki; Fukano, Hideki; Akage, Yuichi; Kondo, Yasuhiro; Saitoh, Tadashi.

In: IEEE Photonics Technology Letters, Vol. 16, No. 12, 12.2004, p. 2613-2615.

Research output: Contribution to journalArticle

Tamura, Munehisa ; Yamanaka, Takayuki ; Fukano, Hideki ; Akage, Yuichi ; Kondo, Yasuhiro ; Saitoh, Tadashi. / High-speed electroabsorption modulators buried with ruthenium-doped SI-InP. In: IEEE Photonics Technology Letters. 2004 ; Vol. 16, No. 12. pp. 2613-2615.
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