High-speed electroabsorption modulators buried with ruthenium-doped SI-InP

Munehisa Tamura, Takayuki Yamanaka, Hideki Fukano, Yuichi Akage, Yasuhiro Kondo, Tadashi Saitoh

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


InGaAlAs-InAlAs electroabsorption modulators are successfully fabricated using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison of measured and calculated microwave characteristics reveals that there is no additional microwave loss because zinc diffusion is inhibited by the use of Ru-doped SI-InP layers. A small-signal electrooptical response with a -3-dB electrical bandwidth of over 50 GHz is demonstrated.

Original languageEnglish
Pages (from-to)2613-2615
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number12
Publication statusPublished - Dec 2004
Externally publishedYes


  • Electroabsorption (EA) modulators
  • Multiple quantum well (MQW)
  • Optical communication
  • Ruthenium (Ru)
  • Semi-insulating (SI) InP

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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