High-speed electroabsorption modulators buried with ruthenium-doped SI-InP

Munehisa Tamura; Takayuki Yamanaka; Hideki Fukano; Yuichi Akage; Yasuhiro Kondo; Tadashi Saitoh

doi:10.1109/LPT.2004.836354

High-speed electroabsorption modulators buried with ruthenium-doped SI-InP

Munehisa Tamura, Takayuki Yamanaka, Hideki Fukano, Yuichi Akage, Yasuhiro Kondo, Tadashi Saitoh

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

InGaAlAs-InAlAs electroabsorption modulators are successfully fabricated using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison of measured and calculated microwave characteristics reveals that there is no additional microwave loss because zinc diffusion is inhibited by the use of Ru-doped SI-InP layers. A small-signal electrooptical response with a -3-dB electrical bandwidth of over 50 GHz is demonstrated.

Original language	English
Pages (from-to)	2613-2615
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2004.836354
Publication status	Published - Dec 2004
Externally published	Yes

Keywords

Electroabsorption (EA) modulators
Multiple quantum well (MQW)
Optical communication
Ruthenium (Ru)
Semi-insulating (SI) InP

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2004.836354

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title = "High-speed electroabsorption modulators buried with ruthenium-doped SI-InP",

abstract = "InGaAlAs-InAlAs electroabsorption modulators are successfully fabricated using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison of measured and calculated microwave characteristics reveals that there is no additional microwave loss because zinc diffusion is inhibited by the use of Ru-doped SI-InP layers. A small-signal electrooptical response with a -3-dB electrical bandwidth of over 50 GHz is demonstrated.",

keywords = "Electroabsorption (EA) modulators, Multiple quantum well (MQW), Optical communication, Ruthenium (Ru), Semi-insulating (SI) InP",

author = "Munehisa Tamura and Takayuki Yamanaka and Hideki Fukano and Yuichi Akage and Yasuhiro Kondo and Tadashi Saitoh",

year = "2004",

month = dec,

doi = "10.1109/LPT.2004.836354",

language = "English",

volume = "16",

pages = "2613--2615",

journal = "IEEE Photonics Technology Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - High-speed electroabsorption modulators buried with ruthenium-doped SI-InP

AU - Tamura, Munehisa

AU - Yamanaka, Takayuki

AU - Fukano, Hideki

AU - Akage, Yuichi

AU - Kondo, Yasuhiro

AU - Saitoh, Tadashi

PY - 2004/12

Y1 - 2004/12

N2 - InGaAlAs-InAlAs electroabsorption modulators are successfully fabricated using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison of measured and calculated microwave characteristics reveals that there is no additional microwave loss because zinc diffusion is inhibited by the use of Ru-doped SI-InP layers. A small-signal electrooptical response with a -3-dB electrical bandwidth of over 50 GHz is demonstrated.

AB - InGaAlAs-InAlAs electroabsorption modulators are successfully fabricated using ruthenium (Ru)-doped semi-insulating (SI)-InP burying technology. A comparison of measured and calculated microwave characteristics reveals that there is no additional microwave loss because zinc diffusion is inhibited by the use of Ru-doped SI-InP layers. A small-signal electrooptical response with a -3-dB electrical bandwidth of over 50 GHz is demonstrated.

KW - Electroabsorption (EA) modulators

KW - Multiple quantum well (MQW)

KW - Optical communication

KW - Ruthenium (Ru)

KW - Semi-insulating (SI) InP

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DO - 10.1109/LPT.2004.836354

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VL - 16

SP - 2613

EP - 2615

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

ER -

High-speed electroabsorption modulators buried with ruthenium-doped SI-InP

Abstract

Keywords

ASJC Scopus subject areas

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