High-speed and high-output voltage edge-illuminated refracting-facet photodiode

Hideki Fukano, Y. Muramoto, Y. Matsuoka

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A high-speed and high-output-peak-voltage edge-illuminated refracting-facet photodiode has been developed by employing a thin absorption layer. The fabricated RFPD shows a responsivity as high as 0.69 A/W even with an absorption layer as thin as 0.43 μm, a maximum 3 dB bandwidth of 66 GHz, and a high-output peak voltage of > 2.5V.

Original languageEnglish
Pages (from-to)1581-1582
Number of pages2
JournalElectronics Letters
Volume35
Issue number18
DOIs
Publication statusPublished - Sep 2 1999
Externally publishedYes

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Photodiodes
Electric potential
Bandwidth

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

High-speed and high-output voltage edge-illuminated refracting-facet photodiode. / Fukano, Hideki; Muramoto, Y.; Matsuoka, Y.

In: Electronics Letters, Vol. 35, No. 18, 02.09.1999, p. 1581-1582.

Research output: Contribution to journalArticle

Fukano, Hideki ; Muramoto, Y. ; Matsuoka, Y. / High-speed and high-output voltage edge-illuminated refracting-facet photodiode. In: Electronics Letters. 1999 ; Vol. 35, No. 18. pp. 1581-1582.
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