TY - GEN
T1 - High-responsivity 2.3-μm heterojunction phototransistor with a strained InAs/InGaAs MQW absorption layer for gas sensing
AU - Fukano, Hideki
AU - Sato, Tomonari
AU - Mitsuhara, Manabu
AU - Kondo, Yasuhiro
AU - Yasaka, Hiroshi
PY - 2007/12/1
Y1 - 2007/12/1
N2 - We have developed a novel mid-infrared photodetector that provides high responsivity and a low dark current. The device consists of a heterojunction phototransistor (HPT) with a strained InAs/InGaAs multiquantum-well (MQW) absorption layer inserted in the low electric field region of the collector. The basic layer structure was formed using the mature InGaAsP material system, which is employed in optical telecommunications devices. The strained InAs well under a low electric field enhances the quantum-confined effect. This provides a high absorption coefficient at a wavelength of 2.3 μm. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10 A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current even at room temperature.
AB - We have developed a novel mid-infrared photodetector that provides high responsivity and a low dark current. The device consists of a heterojunction phototransistor (HPT) with a strained InAs/InGaAs multiquantum-well (MQW) absorption layer inserted in the low electric field region of the collector. The basic layer structure was formed using the mature InGaAsP material system, which is employed in optical telecommunications devices. The strained InAs well under a low electric field enhances the quantum-confined effect. This provides a high absorption coefficient at a wavelength of 2.3 μm. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10 A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current even at room temperature.
UR - http://www.scopus.com/inward/record.url?scp=48349118333&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=48349118333&partnerID=8YFLogxK
U2 - 10.1109/ICSENS.2007.4388641
DO - 10.1109/ICSENS.2007.4388641
M3 - Conference contribution
AN - SCOPUS:48349118333
SN - 1424412617
SN - 9781424412617
T3 - Proceedings of IEEE Sensors
SP - 1271
EP - 1274
BT - The 6th IEEE Conference on SENSORS, IEEE SENSORS 2007
T2 - 6th IEEE Conference on SENSORS, IEEE SENSORS 2007
Y2 - 28 October 2007 through 31 October 2007
ER -