High-responsivity 2.3-μm heterojunction phototransistor with a strained InAs/InGaAs MQW absorption layer for gas sensing

Hideki Fukano, Tomonari Sato, Manabu Mitsuhara, Yasuhiro Kondo, Hiroshi Yasaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have developed a novel mid-infrared photodetector that provides high responsivity and a low dark current. The device consists of a heterojunction phototransistor (HPT) with a strained InAs/InGaAs multiquantum-well (MQW) absorption layer inserted in the low electric field region of the collector. The basic layer structure was formed using the mature InGaAsP material system, which is employed in optical telecommunications devices. The strained InAs well under a low electric field enhances the quantum-confined effect. This provides a high absorption coefficient at a wavelength of 2.3 μm. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10 A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current even at room temperature.

Original languageEnglish
Title of host publicationThe 6th IEEE Conference on SENSORS, IEEE SENSORS 2007
Pages1271-1274
Number of pages4
DOIs
Publication statusPublished - Dec 1 2007
Externally publishedYes
Event6th IEEE Conference on SENSORS, IEEE SENSORS 2007 - Atlanta, GA, United States
Duration: Oct 28 2007Oct 31 2007

Publication series

NameProceedings of IEEE Sensors

Other

Other6th IEEE Conference on SENSORS, IEEE SENSORS 2007
CountryUnited States
CityAtlanta, GA
Period10/28/0710/31/07

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Fukano, H., Sato, T., Mitsuhara, M., Kondo, Y., & Yasaka, H. (2007). High-responsivity 2.3-μm heterojunction phototransistor with a strained InAs/InGaAs MQW absorption layer for gas sensing. In The 6th IEEE Conference on SENSORS, IEEE SENSORS 2007 (pp. 1271-1274). [4388641] (Proceedings of IEEE Sensors). https://doi.org/10.1109/ICSENS.2007.4388641