High-responsivity 2.3-μm heterojunction phototransistor with a strained InAs/InGaAs MQW absorption layer for gas sensing

Hideki Fukano, Tomonari Sato, Manabu Mitsuhara, Yasuhiro Kondo, Hiroshi Yasaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have developed a novel mid-infrared photodetector that provides high responsivity and a low dark current. The device consists of a heterojunction phototransistor (HPT) with a strained InAs/InGaAs multiquantum-well (MQW) absorption layer inserted in the low electric field region of the collector. The basic layer structure was formed using the mature InGaAsP material system, which is employed in optical telecommunications devices. The strained InAs well under a low electric field enhances the quantum-confined effect. This provides a high absorption coefficient at a wavelength of 2.3 μm. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10 A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current even at room temperature.

Original languageEnglish
Title of host publicationProceedings of IEEE Sensors
Pages1271-1274
Number of pages4
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event6th IEEE Conference on SENSORS, IEEE SENSORS 2007 - Atlanta, GA, United States
Duration: Oct 28 2007Oct 31 2007

Other

Other6th IEEE Conference on SENSORS, IEEE SENSORS 2007
CountryUnited States
CityAtlanta, GA
Period10/28/0710/31/07

Fingerprint

Phototransistors
Heterojunctions
Dark currents
Electric fields
Gases
Photodetectors
Photocurrents
Telecommunication
Infrared radiation
Wavelength
Temperature

ASJC Scopus subject areas

  • Engineering (miscellaneous)
  • Electrical and Electronic Engineering

Cite this

Fukano, H., Sato, T., Mitsuhara, M., Kondo, Y., & Yasaka, H. (2007). High-responsivity 2.3-μm heterojunction phototransistor with a strained InAs/InGaAs MQW absorption layer for gas sensing. In Proceedings of IEEE Sensors (pp. 1271-1274). [4388641] https://doi.org/10.1109/ICSENS.2007.4388641

High-responsivity 2.3-μm heterojunction phototransistor with a strained InAs/InGaAs MQW absorption layer for gas sensing. / Fukano, Hideki; Sato, Tomonari; Mitsuhara, Manabu; Kondo, Yasuhiro; Yasaka, Hiroshi.

Proceedings of IEEE Sensors. 2007. p. 1271-1274 4388641.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fukano, H, Sato, T, Mitsuhara, M, Kondo, Y & Yasaka, H 2007, High-responsivity 2.3-μm heterojunction phototransistor with a strained InAs/InGaAs MQW absorption layer for gas sensing. in Proceedings of IEEE Sensors., 4388641, pp. 1271-1274, 6th IEEE Conference on SENSORS, IEEE SENSORS 2007, Atlanta, GA, United States, 10/28/07. https://doi.org/10.1109/ICSENS.2007.4388641
Fukano, Hideki ; Sato, Tomonari ; Mitsuhara, Manabu ; Kondo, Yasuhiro ; Yasaka, Hiroshi. / High-responsivity 2.3-μm heterojunction phototransistor with a strained InAs/InGaAs MQW absorption layer for gas sensing. Proceedings of IEEE Sensors. 2007. pp. 1271-1274
@inproceedings{1e3f457018d040e7bffac9e288fbf19b,
title = "High-responsivity 2.3-μm heterojunction phototransistor with a strained InAs/InGaAs MQW absorption layer for gas sensing",
abstract = "We have developed a novel mid-infrared photodetector that provides high responsivity and a low dark current. The device consists of a heterojunction phototransistor (HPT) with a strained InAs/InGaAs multiquantum-well (MQW) absorption layer inserted in the low electric field region of the collector. The basic layer structure was formed using the mature InGaAsP material system, which is employed in optical telecommunications devices. The strained InAs well under a low electric field enhances the quantum-confined effect. This provides a high absorption coefficient at a wavelength of 2.3 μm. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10 A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current even at room temperature.",
author = "Hideki Fukano and Tomonari Sato and Manabu Mitsuhara and Yasuhiro Kondo and Hiroshi Yasaka",
year = "2007",
doi = "10.1109/ICSENS.2007.4388641",
language = "English",
isbn = "1424412617",
pages = "1271--1274",
booktitle = "Proceedings of IEEE Sensors",

}

TY - GEN

T1 - High-responsivity 2.3-μm heterojunction phototransistor with a strained InAs/InGaAs MQW absorption layer for gas sensing

AU - Fukano, Hideki

AU - Sato, Tomonari

AU - Mitsuhara, Manabu

AU - Kondo, Yasuhiro

AU - Yasaka, Hiroshi

PY - 2007

Y1 - 2007

N2 - We have developed a novel mid-infrared photodetector that provides high responsivity and a low dark current. The device consists of a heterojunction phototransistor (HPT) with a strained InAs/InGaAs multiquantum-well (MQW) absorption layer inserted in the low electric field region of the collector. The basic layer structure was formed using the mature InGaAsP material system, which is employed in optical telecommunications devices. The strained InAs well under a low electric field enhances the quantum-confined effect. This provides a high absorption coefficient at a wavelength of 2.3 μm. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10 A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current even at room temperature.

AB - We have developed a novel mid-infrared photodetector that provides high responsivity and a low dark current. The device consists of a heterojunction phototransistor (HPT) with a strained InAs/InGaAs multiquantum-well (MQW) absorption layer inserted in the low electric field region of the collector. The basic layer structure was formed using the mature InGaAsP material system, which is employed in optical telecommunications devices. The strained InAs well under a low electric field enhances the quantum-confined effect. This provides a high absorption coefficient at a wavelength of 2.3 μm. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10 A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current even at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=48349118333&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=48349118333&partnerID=8YFLogxK

U2 - 10.1109/ICSENS.2007.4388641

DO - 10.1109/ICSENS.2007.4388641

M3 - Conference contribution

AN - SCOPUS:48349118333

SN - 1424412617

SN - 9781424412617

SP - 1271

EP - 1274

BT - Proceedings of IEEE Sensors

ER -