High-resolution angle-resolved photoemission study of layered transition-metal dichalcogenides Nb1-xTixXc2 (Xc = S, Se, Te)

T. Sato; H. Komatsu; K. Terashima; T. Takahashi; M. Shimakawa; K. Hayashi

doi:10.1016/j.elspec.2005.01.243

High-resolution angle-resolved photoemission study of layered transition-metal dichalcogenides Nb_1-xTi_xXc₂ (Xc = S, Se, Te)

T. Sato, H. Komatsu, K. Terashima, T. Takahashi, M. Shimakawa, K. Hayashi

Graduate School of Natural Science and Technology

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

High-resolution angle-resolved photoemission spectroscopy (ARPES) has been performed on Nb_1-xTi_xXc₂ (Xc = S, Se, Te) to elucidate the change in the band structure as a function of x and Xc. We found that spectral intensity near EF of S- and Se-based compounds is remarkably suppressed, suggesting the strong scattering of electrons by the substitution of transition metals. In contrast, Te-based compound shows a clear Fermi edge. We discuss the origin of metal-semiconductor transition in terms of the strength of hybridization between chalcogen p band and transition metal d band.

Original language	English
Pages (from-to)	633-637
Number of pages	5
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	144-147
DOIs	https://doi.org/10.1016/j.elspec.2005.01.243
Publication status	Published - Jun 2005

Keywords

Photoemission
Transition metal dichalcogenides

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Radiation
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Spectroscopy
Physical and Theoretical Chemistry

Access to Document

10.1016/j.elspec.2005.01.243

Cite this

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title = "High-resolution angle-resolved photoemission study of layered transition-metal dichalcogenides Nb1-xTixXc2 (Xc = S, Se, Te)",

abstract = "High-resolution angle-resolved photoemission spectroscopy (ARPES) has been performed on Nb1-xTixXc2 (Xc = S, Se, Te) to elucidate the change in the band structure as a function of x and Xc. We found that spectral intensity near EF of S- and Se-based compounds is remarkably suppressed, suggesting the strong scattering of electrons by the substitution of transition metals. In contrast, Te-based compound shows a clear Fermi edge. We discuss the origin of metal-semiconductor transition in terms of the strength of hybridization between chalcogen p band and transition metal d band.",

keywords = "Photoemission, Transition metal dichalcogenides",

author = "T. Sato and H. Komatsu and K. Terashima and T. Takahashi and M. Shimakawa and K. Hayashi",

note = "Funding Information: This work is supported by a grant from the MEXT of Japan. ",

year = "2005",

month = jun,

doi = "10.1016/j.elspec.2005.01.243",

language = "English",

volume = "144-147",

pages = "633--637",

journal = "Journal of Electron Spectroscopy and Related Phenomena",

issn = "0368-2048",

publisher = "Elsevier",

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TY - JOUR

T1 - High-resolution angle-resolved photoemission study of layered transition-metal dichalcogenides Nb1-xTixXc2 (Xc = S, Se, Te)

AU - Sato, T.

AU - Komatsu, H.

AU - Terashima, K.

AU - Takahashi, T.

AU - Shimakawa, M.

AU - Hayashi, K.

N1 - Funding Information: This work is supported by a grant from the MEXT of Japan.

PY - 2005/6

Y1 - 2005/6

N2 - High-resolution angle-resolved photoemission spectroscopy (ARPES) has been performed on Nb1-xTixXc2 (Xc = S, Se, Te) to elucidate the change in the band structure as a function of x and Xc. We found that spectral intensity near EF of S- and Se-based compounds is remarkably suppressed, suggesting the strong scattering of electrons by the substitution of transition metals. In contrast, Te-based compound shows a clear Fermi edge. We discuss the origin of metal-semiconductor transition in terms of the strength of hybridization between chalcogen p band and transition metal d band.

AB - High-resolution angle-resolved photoemission spectroscopy (ARPES) has been performed on Nb1-xTixXc2 (Xc = S, Se, Te) to elucidate the change in the band structure as a function of x and Xc. We found that spectral intensity near EF of S- and Se-based compounds is remarkably suppressed, suggesting the strong scattering of electrons by the substitution of transition metals. In contrast, Te-based compound shows a clear Fermi edge. We discuss the origin of metal-semiconductor transition in terms of the strength of hybridization between chalcogen p band and transition metal d band.

KW - Photoemission

KW - Transition metal dichalcogenides

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JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

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