High-resolution angle-resolved photoemission study of layered transition-metal dichalcogenides Nb1-xTixXc2 (Xc = S, Se, Te)

T. Sato, H. Komatsu, K. Terashima, T. Takahashi, M. Shimakawa, K. Hayashi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


High-resolution angle-resolved photoemission spectroscopy (ARPES) has been performed on Nb1-xTixXc2 (Xc = S, Se, Te) to elucidate the change in the band structure as a function of x and Xc. We found that spectral intensity near EF of S- and Se-based compounds is remarkably suppressed, suggesting the strong scattering of electrons by the substitution of transition metals. In contrast, Te-based compound shows a clear Fermi edge. We discuss the origin of metal-semiconductor transition in terms of the strength of hybridization between chalcogen p band and transition metal d band.

Original languageEnglish
Pages (from-to)633-637
Number of pages5
JournalJournal of Electron Spectroscopy and Related Phenomena
Publication statusPublished - Jun 2005


  • Photoemission
  • Transition metal dichalcogenides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry


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