High-quality single crystal growth of UGe2 and URhGe

E. Yamamoto, Y. Haga, T. D. Matsuda, S. Ikeda, Y. Inada, R. Settai, Y. Onuki

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We searched for an experimental condition of crystal growth for a ferromagnetic superconductors of UGe2 and URhGe. Samples were prepared for both polycrystalline and single crystals, which were arc-melted and grown by the Czochralski-pulling method in a tetra-arc furnace, respectively. Annealing is an important process to enhance sample-quality, namely the residual resistivity ratio. We tried to anneal the samples under various temperatures, which were wrapped by the Ta-foil and vacuum-sealed in the quartz ample, together with the solid state electrotransport method in ultra-high vacuum. The highest residual resistivity ratio was 900 for UGe2 and 41 for URhGe.

Original languageEnglish
Pages (from-to)e171-e172
JournalJournal of Magnetism and Magnetic Materials
Volume272-276
Issue numberSUPPL. 1
DOIs
Publication statusPublished - May 1 2004
Externally publishedYes

Keywords

  • Crystal growth
  • Superconductivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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