High-quality single crystal growth of UGe2 and URhGe

E. Yamamoto; Y. Haga; T. D. Matsuda; S. Ikeda; Y. Inada; R. Settai; Y. Onuki

doi:10.1016/j.jmmm.2003.12.1083

High-quality single crystal growth of UGe₂ and URhGe

E. Yamamoto, Y. Haga, T. D. Matsuda, S. Ikeda, Y. Inada, R. Settai, Y. Onuki

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We searched for an experimental condition of crystal growth for a ferromagnetic superconductors of UGe₂ and URhGe. Samples were prepared for both polycrystalline and single crystals, which were arc-melted and grown by the Czochralski-pulling method in a tetra-arc furnace, respectively. Annealing is an important process to enhance sample-quality, namely the residual resistivity ratio. We tried to anneal the samples under various temperatures, which were wrapped by the Ta-foil and vacuum-sealed in the quartz ample, together with the solid state electrotransport method in ultra-high vacuum. The highest residual resistivity ratio was 900 for UGe₂ and 41 for URhGe.

Original language	English
Pages (from-to)	e171-e172
Journal	Journal of Magnetism and Magnetic Materials
Volume	272-276
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1016/j.jmmm.2003.12.1083
Publication status	Published - May 2004
Externally published	Yes

Keywords

Crystal growth
Superconductivity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "High-quality single crystal growth of UGe2 and URhGe",

abstract = "We searched for an experimental condition of crystal growth for a ferromagnetic superconductors of UGe2 and URhGe. Samples were prepared for both polycrystalline and single crystals, which were arc-melted and grown by the Czochralski-pulling method in a tetra-arc furnace, respectively. Annealing is an important process to enhance sample-quality, namely the residual resistivity ratio. We tried to anneal the samples under various temperatures, which were wrapped by the Ta-foil and vacuum-sealed in the quartz ample, together with the solid state electrotransport method in ultra-high vacuum. The highest residual resistivity ratio was 900 for UGe2 and 41 for URhGe.",

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T1 - High-quality single crystal growth of UGe2 and URhGe

AU - Yamamoto, E.

AU - Haga, Y.

AU - Matsuda, T. D.

AU - Ikeda, S.

AU - Inada, Y.

AU - Settai, R.

AU - Onuki, Y.

PY - 2004/5

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AB - We searched for an experimental condition of crystal growth for a ferromagnetic superconductors of UGe2 and URhGe. Samples were prepared for both polycrystalline and single crystals, which were arc-melted and grown by the Czochralski-pulling method in a tetra-arc furnace, respectively. Annealing is an important process to enhance sample-quality, namely the residual resistivity ratio. We tried to anneal the samples under various temperatures, which were wrapped by the Ta-foil and vacuum-sealed in the quartz ample, together with the solid state electrotransport method in ultra-high vacuum. The highest residual resistivity ratio was 900 for UGe2 and 41 for URhGe.

KW - Crystal growth

KW - Superconductivity

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