High-quality single-crystal growth and a change of the electronic states under pressure in CeRh2Si2

S. Araki; R. Settai; T. C. Kobayashi; Y. Onuki

doi:10.1016/S0304-8853(00)00785-X

High-quality single-crystal growth and a change of the electronic states under pressure in CeRh₂Si₂

S. Araki, R. Settai, T. C. Kobayashi, Y. Onuki

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We succeeded in growing a high-quality single crystal of CeRh₂Si₂ with a residual resistivity ratio of 110. Under a pressure of 1.1 GPa, superconductivity is found below T_c = 0.38 K, where a Néel temperature of T_N = 36K is suppressed down to almost zero.

Original language	English
Pages (from-to)	80-82
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	226-230
Issue number	PART I
DOIs	https://doi.org/10.1016/S0304-8853(00)00785-X
Publication status	Published - Jan 1 2001
Externally published	Yes

Keywords

Pressure effect
Quantum critical point
Superconductivity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/S0304-8853(00)00785-X

Cite this

@article{06688857f5ab49a7a8518f5c58e42c3f,

title = "High-quality single-crystal growth and a change of the electronic states under pressure in CeRh2Si2",

abstract = "We succeeded in growing a high-quality single crystal of CeRh2Si2 with a residual resistivity ratio of 110. Under a pressure of 1.1 GPa, superconductivity is found below Tc = 0.38 K, where a N{\'e}el temperature of TN = 36K is suppressed down to almost zero.",

keywords = "Pressure effect, Quantum critical point, Superconductivity",

author = "S. Araki and R. Settai and Kobayashi, {T. C.} and Y. Onuki",

year = "2001",

month = jan,

day = "1",

doi = "10.1016/S0304-8853(00)00785-X",

language = "English",

volume = "226-230",

pages = "80--82",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "PART I",

}

TY - JOUR

T1 - High-quality single-crystal growth and a change of the electronic states under pressure in CeRh2Si2

AU - Araki, S.

AU - Settai, R.

AU - Kobayashi, T. C.

AU - Onuki, Y.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - We succeeded in growing a high-quality single crystal of CeRh2Si2 with a residual resistivity ratio of 110. Under a pressure of 1.1 GPa, superconductivity is found below Tc = 0.38 K, where a Néel temperature of TN = 36K is suppressed down to almost zero.

AB - We succeeded in growing a high-quality single crystal of CeRh2Si2 with a residual resistivity ratio of 110. Under a pressure of 1.1 GPa, superconductivity is found below Tc = 0.38 K, where a Néel temperature of TN = 36K is suppressed down to almost zero.

KW - Pressure effect

KW - Quantum critical point

KW - Superconductivity

UR - http://www.scopus.com/inward/record.url?scp=0035326971&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035326971&partnerID=8YFLogxK

U2 - 10.1016/S0304-8853(00)00785-X

DO - 10.1016/S0304-8853(00)00785-X

M3 - Article

AN - SCOPUS:0035326971

SN - 0304-8853

VL - 226-230

SP - 80

EP - 82

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - PART I

ER -