High-quality single-crystal growth and a change of the electronic states under pressure in CeRh2Si2

Shingo Araki, R. Settai, Tatsuo Kobayashi, Y. Onuki

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We succeeded in growing a high-quality single crystal of CeRh2Si2 with a residual resistivity ratio of 110. Under a pressure of 1.1 GPa, superconductivity is found below Tc = 0.38 K, where a Néel temperature of TN = 36K is suppressed down to almost zero.

Original languageEnglish
Pages (from-to)80-82
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume226-230
Issue numberPART I
Publication statusPublished - 2001
Externally publishedYes

Fingerprint

Electronic states
Crystallization
Superconductivity
Crystal growth
crystal growth
superconductivity
Single crystals
electrical resistivity
single crystals
electronics
Temperature
temperature

Keywords

  • Pressure effect
  • Quantum critical point
  • Superconductivity

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

High-quality single-crystal growth and a change of the electronic states under pressure in CeRh2Si2. / Araki, Shingo; Settai, R.; Kobayashi, Tatsuo; Onuki, Y.

In: Journal of Magnetism and Magnetic Materials, Vol. 226-230, No. PART I, 2001, p. 80-82.

Research output: Contribution to journalArticle

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