High Pressure Structures of Organic Low Dimensional Conductor DCNQI Compounds

Y. Nogami, S. Hayashi, T. Date, K. Oshima, K. Hiraki, K. Kanoda, K. Hiraki, K. Kanoda

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Using X-ray and DAC, room-temperature crystal structures under physical pressure(PP) were solved for DCNQI-Cu compounds which exhibit particular metal-insulator(M-I) transition owing to their electronic low dimensionality(CDW) and strong correlation(Mott). This M-I transition is known to be triggered with moderate(=small) PP or chemical substitution(chemical pressure:CP). Observed high pressure structures were compared with theoretical structure determinations. From the structural viewpoint, relation between PP and CP effects on the M-I transition was discussed, [organic conductor, metal-insulator transition, charge density wave, Mott transition, X-ray diffraction].

Original languageEnglish
Pages (from-to)404-406
Number of pages3
JournalReview of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu
Volume7
DOIs
Publication statusPublished - Jan 1 1998

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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