Abstract
We have developed two types of high-speed semiconductor optical modulators operating at 40 Gbit/s with reduced driving voltage. One is a compact Mach-Zehnder modulator module. The modulator chip has an n-i-n isotype heterostructure for high-speed and low-driving-voltage operation. We obtained error-free operation in a push-pull configuration with a peak-to-peak voltage of 1.3 V. The other is an electroabsorption modulator integrated with microwave coplanar waveguides. A narrow core buried with polyimide provides a steady large extinction ratio and a 3-dB-down frequency as large as 46 GHz. The fabricated modulator operates at a driving voltage as low as 0.79 V.
| Original language | English |
|---|---|
| Pages (from-to) | 39-44 |
| Number of pages | 6 |
| Journal | NTT Technical Review |
| Volume | 4 |
| Issue number | 7 |
| Publication status | Published - Jul 1 2006 |
| Externally published | Yes |
ASJC Scopus subject areas
- Computer Science Applications
- Computer Networks and Communications
- Electrical and Electronic Engineering
Fingerprint Dive into the research topics of 'High-performance InP-based optical modulators'. Together they form a unique fingerprint.
Cite this
Yamanaka, T., Tsuzuki, K., Kikuchi, N., & Fukano, H. (2006). High-performance InP-based optical modulators. NTT Technical Review, 4(7), 39-44.