High-performance InP-based optical modulators

Takayuki Yamanaka, Ken Tsuzuki, Nobuhiro Kikuchi, Hideki Fukano

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have developed two types of high-speed semiconductor optical modulators operating at 40 Gbit/s with reduced driving voltage. One is a compact Mach-Zehnder modulator module. The modulator chip has an n-i-n isotype heterostructure for high-speed and low-driving-voltage operation. We obtained error-free operation in a push-pull configuration with a peak-to-peak voltage of 1.3 V. The other is an electroabsorption modulator integrated with microwave coplanar waveguides. A narrow core buried with polyimide provides a steady large extinction ratio and a 3-dB-down frequency as large as 46 GHz. The fabricated modulator operates at a driving voltage as low as 0.79 V.

Original languageEnglish
Pages (from-to)39-44
Number of pages6
JournalNTT Technical Review
Volume4
Issue number7
Publication statusPublished - Jul 2006
Externally publishedYes

Fingerprint

Light modulators
Modulators
Electric potential
Electroabsorption modulators
Coplanar waveguides
Polyimides
Mach number
Heterojunctions
Microwaves
Semiconductor materials

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Yamanaka, T., Tsuzuki, K., Kikuchi, N., & Fukano, H. (2006). High-performance InP-based optical modulators. NTT Technical Review, 4(7), 39-44.

High-performance InP-based optical modulators. / Yamanaka, Takayuki; Tsuzuki, Ken; Kikuchi, Nobuhiro; Fukano, Hideki.

In: NTT Technical Review, Vol. 4, No. 7, 07.2006, p. 39-44.

Research output: Contribution to journalArticle

Yamanaka, T, Tsuzuki, K, Kikuchi, N & Fukano, H 2006, 'High-performance InP-based optical modulators', NTT Technical Review, vol. 4, no. 7, pp. 39-44.
Yamanaka T, Tsuzuki K, Kikuchi N, Fukano H. High-performance InP-based optical modulators. NTT Technical Review. 2006 Jul;4(7):39-44.
Yamanaka, Takayuki ; Tsuzuki, Ken ; Kikuchi, Nobuhiro ; Fukano, Hideki. / High-performance InP-based optical modulators. In: NTT Technical Review. 2006 ; Vol. 4, No. 7. pp. 39-44.
@article{4b4afbeb8ecf49279a57b8d65075bb6a,
title = "High-performance InP-based optical modulators",
abstract = "We have developed two types of high-speed semiconductor optical modulators operating at 40 Gbit/s with reduced driving voltage. One is a compact Mach-Zehnder modulator module. The modulator chip has an n-i-n isotype heterostructure for high-speed and low-driving-voltage operation. We obtained error-free operation in a push-pull configuration with a peak-to-peak voltage of 1.3 V. The other is an electroabsorption modulator integrated with microwave coplanar waveguides. A narrow core buried with polyimide provides a steady large extinction ratio and a 3-dB-down frequency as large as 46 GHz. The fabricated modulator operates at a driving voltage as low as 0.79 V.",
author = "Takayuki Yamanaka and Ken Tsuzuki and Nobuhiro Kikuchi and Hideki Fukano",
year = "2006",
month = "7",
language = "English",
volume = "4",
pages = "39--44",
journal = "NTT Technical Review",
issn = "1348-3447",
publisher = "Nippon Telegraph and Telephone Corp.",
number = "7",

}

TY - JOUR

T1 - High-performance InP-based optical modulators

AU - Yamanaka, Takayuki

AU - Tsuzuki, Ken

AU - Kikuchi, Nobuhiro

AU - Fukano, Hideki

PY - 2006/7

Y1 - 2006/7

N2 - We have developed two types of high-speed semiconductor optical modulators operating at 40 Gbit/s with reduced driving voltage. One is a compact Mach-Zehnder modulator module. The modulator chip has an n-i-n isotype heterostructure for high-speed and low-driving-voltage operation. We obtained error-free operation in a push-pull configuration with a peak-to-peak voltage of 1.3 V. The other is an electroabsorption modulator integrated with microwave coplanar waveguides. A narrow core buried with polyimide provides a steady large extinction ratio and a 3-dB-down frequency as large as 46 GHz. The fabricated modulator operates at a driving voltage as low as 0.79 V.

AB - We have developed two types of high-speed semiconductor optical modulators operating at 40 Gbit/s with reduced driving voltage. One is a compact Mach-Zehnder modulator module. The modulator chip has an n-i-n isotype heterostructure for high-speed and low-driving-voltage operation. We obtained error-free operation in a push-pull configuration with a peak-to-peak voltage of 1.3 V. The other is an electroabsorption modulator integrated with microwave coplanar waveguides. A narrow core buried with polyimide provides a steady large extinction ratio and a 3-dB-down frequency as large as 46 GHz. The fabricated modulator operates at a driving voltage as low as 0.79 V.

UR - http://www.scopus.com/inward/record.url?scp=33748962669&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748962669&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:33748962669

VL - 4

SP - 39

EP - 44

JO - NTT Technical Review

JF - NTT Technical Review

SN - 1348-3447

IS - 7

ER -