Abstract
We have developed two types of high-speed semiconductor optical modulators operating at 40 Gbit/s with reduced driving voltage. One is a compact Mach-Zehnder modulator module. The modulator chip has an n-i-n isotype heterostructure for high-speed and low-driving-voltage operation. We obtained error-free operation in a push-pull configuration with a peak-to-peak voltage of 1.3 V. The other is an electroabsorption modulator integrated with microwave coplanar waveguides. A narrow core buried with polyimide provides a steady large extinction ratio and a 3-dB-down frequency as large as 46 GHz. The fabricated modulator operates at a driving voltage as low as 0.79 V.
| Original language | English |
|---|---|
| Pages (from-to) | 39-44 |
| Number of pages | 6 |
| Journal | NTT Technical Review |
| Volume | 4 |
| Issue number | 7 |
| Publication status | Published - Jul 2006 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering
Cite this
High-performance InP-based optical modulators. / Yamanaka, Takayuki; Tsuzuki, Ken; Kikuchi, Nobuhiro; Fukano, Hideki.
In: NTT Technical Review, Vol. 4, No. 7, 07.2006, p. 39-44.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-performance InP-based optical modulators
AU - Yamanaka, Takayuki
AU - Tsuzuki, Ken
AU - Kikuchi, Nobuhiro
AU - Fukano, Hideki
PY - 2006/7
Y1 - 2006/7
N2 - We have developed two types of high-speed semiconductor optical modulators operating at 40 Gbit/s with reduced driving voltage. One is a compact Mach-Zehnder modulator module. The modulator chip has an n-i-n isotype heterostructure for high-speed and low-driving-voltage operation. We obtained error-free operation in a push-pull configuration with a peak-to-peak voltage of 1.3 V. The other is an electroabsorption modulator integrated with microwave coplanar waveguides. A narrow core buried with polyimide provides a steady large extinction ratio and a 3-dB-down frequency as large as 46 GHz. The fabricated modulator operates at a driving voltage as low as 0.79 V.
AB - We have developed two types of high-speed semiconductor optical modulators operating at 40 Gbit/s with reduced driving voltage. One is a compact Mach-Zehnder modulator module. The modulator chip has an n-i-n isotype heterostructure for high-speed and low-driving-voltage operation. We obtained error-free operation in a push-pull configuration with a peak-to-peak voltage of 1.3 V. The other is an electroabsorption modulator integrated with microwave coplanar waveguides. A narrow core buried with polyimide provides a steady large extinction ratio and a 3-dB-down frequency as large as 46 GHz. The fabricated modulator operates at a driving voltage as low as 0.79 V.
UR - http://www.scopus.com/inward/record.url?scp=33748962669&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33748962669&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:33748962669
VL - 4
SP - 39
EP - 44
JO - NTT Technical Review
JF - NTT Technical Review
SN - 1348-3447
IS - 7
ER -