High-performance C60 thin-film field-effect transistors with parylene gate insulator

Yoshihiro Kubozono, Simon Haas, Wolfgang L. Kalb, Pierre Joris, Fabian Meng, Akihiko Fujiwara, Bertram Batlogg

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19 Citations (Scopus)

Abstract

C60 field-effect transistors (FETs) have been fabricated with parylene gate dielectric on SiSi O2, on polyethylene terephthalate, and commercially available transparent sheet substrates. The best performance of the C60 FET device is achieved with parylene as gate dielectric: field-effect mobility of 0.41 cm2 V-1 s-1 and on-off ratio of ∼ 107. The excellent FET characteristics are recorded without any annealing, and the devices were kept in He atmosphere after an exposure to air. This result suggests the parylene gate dielectric to be highly H2 O repellent. The mechanical flexibility and air-exposure effect were studied for the C60 FET with parylene gate dielectric.

Original languageEnglish
Article number033316
JournalApplied Physics Letters
Volume93
Issue number3
DOIs
Publication statusPublished - Aug 4 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Kubozono, Y., Haas, S., Kalb, W. L., Joris, P., Meng, F., Fujiwara, A., & Batlogg, B. (2008). High-performance C60 thin-film field-effect transistors with parylene gate insulator. Applied Physics Letters, 93(3), [033316]. https://doi.org/10.1063/1.2959819