High growth rate of vertically aligned carbon nanotubes using a plasma shield in microwave plasma-enhanced chemical vapor deposition

Hiroshi Kinoshita, Ippei Kume, Hirokazu Sakai, Masahito Tagawa, Nobuo Ohmae

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The vertically aligned carbon nanotubes were synthesized using microwave plasma-enhanced chemical vapor deposition. The high growth rate was achieved by avoiding the direct plasma irradiation on a substrate, in which the growth of carbon nanotubes occurs, using a plasma shield. Transmission electron microscopy and scanning electron microscopy were used to investigate the synthesis of carbon nanotubes without and with the plasma shield. It was found that the synthesis process of the carbon nanotubes with the shield possessed two growth stages, and the growth rate in the fast growth stage was 280 nm/s.

Original languageEnglish
Pages (from-to)2753-2756
Number of pages4
JournalCarbon
Volume42
Issue number12-13
DOIs
Publication statusPublished - 2004
Externally publishedYes

Fingerprint

Carbon Nanotubes
Plasma enhanced chemical vapor deposition
Carbon nanotubes
Microwaves
Plasmas
Irradiation
Transmission electron microscopy
Scanning electron microscopy
Substrates

Keywords

  • A. Carbon nanotubes
  • B. Chemical vapor deposition
  • C. Electron microscopy

ASJC Scopus subject areas

  • Materials Chemistry

Cite this

High growth rate of vertically aligned carbon nanotubes using a plasma shield in microwave plasma-enhanced chemical vapor deposition. / Kinoshita, Hiroshi; Kume, Ippei; Sakai, Hirokazu; Tagawa, Masahito; Ohmae, Nobuo.

In: Carbon, Vol. 42, No. 12-13, 2004, p. 2753-2756.

Research output: Contribution to journalArticle

Kinoshita, Hiroshi ; Kume, Ippei ; Sakai, Hirokazu ; Tagawa, Masahito ; Ohmae, Nobuo. / High growth rate of vertically aligned carbon nanotubes using a plasma shield in microwave plasma-enhanced chemical vapor deposition. In: Carbon. 2004 ; Vol. 42, No. 12-13. pp. 2753-2756.
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