High frequency characteristics of InAlAs/InGaAs HBT's

Hideki Fukano, Yuichi Kawamura, Hiromitsu Asai, Yoshifumi Takanashi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

InAlAs/InGaAs heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy are fabricated. A cutoff frequency (fT) of 52 GHz is achieved in the HBT's with a base thickness of 1000 angstrom. A decrease in FT under a high collector current density condition is observed. This is attributed both to the base widening and base-collector capacitance increase by the electron space charge in the collector depletion layer.

Original languageEnglish
Pages (from-to)1737-1739
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume28
Issue number10
Publication statusPublished - Oct 1989
Externally publishedYes

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
accumulators
heterojunctions
Cutoff frequency
Electric space charge
Molecular beam epitaxy
Current density
Capacitance
Electrons
space charge
depletion
molecular beam epitaxy
cut-off
capacitance
current density
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High frequency characteristics of InAlAs/InGaAs HBT's. / Fukano, Hideki; Kawamura, Yuichi; Asai, Hiromitsu; Takanashi, Yoshifumi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 28, No. 10, 10.1989, p. 1737-1739.

Research output: Contribution to journalArticle

Fukano, Hideki ; Kawamura, Yuichi ; Asai, Hiromitsu ; Takanashi, Yoshifumi. / High frequency characteristics of InAlAs/InGaAs HBT's. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1989 ; Vol. 28, No. 10. pp. 1737-1739.
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