Abstract
InAlAs/InGaAs heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy are fabricated. A cutoff frequency (fT) of 52 GHz is achieved in the HBT's with a base thickness of 1000 angstrom. A decrease in FT under a high collector current density condition is observed. This is attributed both to the base widening and base-collector capacitance increase by the electron space charge in the collector depletion layer.
| Original language | English |
|---|---|
| Pages (from-to) | 1737-1739 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 28 |
| Issue number | 10 |
| Publication status | Published - Oct 1989 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
High frequency characteristics of InAlAs/InGaAs HBT's. / Fukano, Hideki; Kawamura, Yuichi; Asai, Hiromitsu; Takanashi, Yoshifumi.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 28, No. 10, 10.1989, p. 1737-1739.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High frequency characteristics of InAlAs/InGaAs HBT's
AU - Fukano, Hideki
AU - Kawamura, Yuichi
AU - Asai, Hiromitsu
AU - Takanashi, Yoshifumi
PY - 1989/10
Y1 - 1989/10
N2 - InAlAs/InGaAs heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy are fabricated. A cutoff frequency (fT) of 52 GHz is achieved in the HBT's with a base thickness of 1000 angstrom. A decrease in FT under a high collector current density condition is observed. This is attributed both to the base widening and base-collector capacitance increase by the electron space charge in the collector depletion layer.
AB - InAlAs/InGaAs heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy are fabricated. A cutoff frequency (fT) of 52 GHz is achieved in the HBT's with a base thickness of 1000 angstrom. A decrease in FT under a high collector current density condition is observed. This is attributed both to the base widening and base-collector capacitance increase by the electron space charge in the collector depletion layer.
UR - http://www.scopus.com/inward/record.url?scp=0024755015&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0024755015&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0024755015
VL - 28
SP - 1737
EP - 1739
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10
ER -