Abstract
InAlAs/InGaAs heterojunction bipolar transistors (HBT’s) grown by molecular beam epitaxy are fabricated. A cutoff frequency (fT) of 52 GHz is achieved in the HBT’s with a base thickness of 1000 Å. A decrease in fT under a high collector current density condition is observed. This is attributed both to the base widening and base-collector capacitance increase caused by the electron space charge in the collector depletion layer.
Original language | English |
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Pages (from-to) | L1737-L1739 |
Journal | Japanese Journal of Applied Physics |
Volume | 28 |
Issue number | 10 A |
DOIs | |
Publication status | Published - Oct 1989 |
Externally published | Yes |
Keywords
- Cutoff frequency
- Hbt
- Heterojunction bipolar transistor
- Hole concentration compensation
- Inaias
- Ingaas
- Molecular beam epitaxy
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)