Abstract
InAlAs/InGaAs heterojunction bipolar transistors (HBT’s) grown by molecular beam epitaxy are fabricated. A cutoff frequency (fT) of 52 GHz is achieved in the HBT’s with a base thickness of 1000 Å. A decrease in fT under a high collector current density condition is observed. This is attributed both to the base widening and base-collector capacitance increase caused by the electron space charge in the collector depletion layer.
| Original language | English |
|---|---|
| Pages (from-to) | L1737-L1739 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 28 |
| Issue number | 10 A |
| DOIs | |
| Publication status | Published - Oct 1989 |
| Externally published | Yes |
Keywords
- Cutoff frequency
- Hbt
- Heterojunction bipolar transistor
- Hole concentration compensation
- Inaias
- Ingaas
- Molecular beam epitaxy
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Cite this
Fukano, H., Kawamura, Y., Asai, H., & Takanashi, Y. (1989). High frequency characteristics of InAlAs/InGaAs HBT’s. Japanese Journal of Applied Physics, 28(10 A), L1737-L1739. https://doi.org/10.1143/JJAP.28.L1737