High frequency characteristics of InAlAs/InGaAs HBT’s

Hideki Fukano, Yuichi Kawamura, Hiromitsu Asai, Yoshifumi Takanashi

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


InAlAs/InGaAs heterojunction bipolar transistors (HBT’s) grown by molecular beam epitaxy are fabricated. A cutoff frequency (fT) of 52 GHz is achieved in the HBT’s with a base thickness of 1000 Å. A decrease in fT under a high collector current density condition is observed. This is attributed both to the base widening and base-collector capacitance increase caused by the electron space charge in the collector depletion layer.

Original languageEnglish
Pages (from-to)L1737-L1739
JournalJapanese Journal of Applied Physics
Issue number10 A
Publication statusPublished - Oct 1989
Externally publishedYes


  • Cutoff frequency
  • Hbt
  • Heterojunction bipolar transistor
  • Hole concentration compensation
  • Inaias
  • Ingaas
  • Molecular beam epitaxy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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