High frequency characteristics of InAlAs/InGaAs HBT’s

Hideki Fukano; Yuichi Kawamura; Hiromitsu Asai; Yoshifumi Takanashi

doi:10.1143/JJAP.28.L1737

High frequency characteristics of InAlAs/InGaAs HBT’s

Hideki Fukano, Yuichi Kawamura, Hiromitsu Asai, Yoshifumi Takanashi

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

InAlAs/InGaAs heterojunction bipolar transistors (HBT’s) grown by molecular beam epitaxy are fabricated. A cutoff frequency (f_T) of 52 GHz is achieved in the HBT’s with a base thickness of 1000 Å. A decrease in f_T under a high collector current density condition is observed. This is attributed both to the base widening and base-collector capacitance increase caused by the electron space charge in the collector depletion layer.

Original language	English
Pages (from-to)	L1737-L1739
Journal	Japanese Journal of Applied Physics
Volume	28
Issue number	10 A
DOIs	https://doi.org/10.1143/JJAP.28.L1737
Publication status	Published - Oct 1989
Externally published	Yes

Keywords

Cutoff frequency
Hbt
Heterojunction bipolar transistor
Hole concentration compensation
Inaias
Ingaas
Molecular beam epitaxy

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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@article{5760b2d252da4265a66435446046a17e,

title = "High frequency characteristics of InAlAs/InGaAs HBT{\textquoteright}s",

abstract = "InAlAs/InGaAs heterojunction bipolar transistors (HBT{\textquoteright}s) grown by molecular beam epitaxy are fabricated. A cutoff frequency (fT) of 52 GHz is achieved in the HBT{\textquoteright}s with a base thickness of 1000 {\AA}. A decrease in fT under a high collector current density condition is observed. This is attributed both to the base widening and base-collector capacitance increase caused by the electron space charge in the collector depletion layer.",

keywords = "Cutoff frequency, Hbt, Heterojunction bipolar transistor, Hole concentration compensation, Inaias, Ingaas, Molecular beam epitaxy",

author = "Hideki Fukano and Yuichi Kawamura and Hiromitsu Asai and Yoshifumi Takanashi",

year = "1989",

month = oct,

doi = "10.1143/JJAP.28.L1737",

language = "English",

volume = "28",

pages = "L1737--L1739",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "INSTITUTE OF PURE AND APPLIED PHYSICS",

number = "10 A",

}

TY - JOUR

T1 - High frequency characteristics of InAlAs/InGaAs HBT’s

AU - Fukano, Hideki

AU - Kawamura, Yuichi

AU - Asai, Hiromitsu

AU - Takanashi, Yoshifumi

PY - 1989/10

Y1 - 1989/10

N2 - InAlAs/InGaAs heterojunction bipolar transistors (HBT’s) grown by molecular beam epitaxy are fabricated. A cutoff frequency (fT) of 52 GHz is achieved in the HBT’s with a base thickness of 1000 Å. A decrease in fT under a high collector current density condition is observed. This is attributed both to the base widening and base-collector capacitance increase caused by the electron space charge in the collector depletion layer.

AB - InAlAs/InGaAs heterojunction bipolar transistors (HBT’s) grown by molecular beam epitaxy are fabricated. A cutoff frequency (fT) of 52 GHz is achieved in the HBT’s with a base thickness of 1000 Å. A decrease in fT under a high collector current density condition is observed. This is attributed both to the base widening and base-collector capacitance increase caused by the electron space charge in the collector depletion layer.

KW - Cutoff frequency

KW - Hbt

KW - Heterojunction bipolar transistor

KW - Hole concentration compensation

KW - Inaias

KW - Ingaas

KW - Molecular beam epitaxy

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U2 - 10.1143/JJAP.28.L1737

DO - 10.1143/JJAP.28.L1737

M3 - Article

AN - SCOPUS:0024755015

VL - 28

SP - L1737-L1739

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 10 A

ER -

High frequency characteristics of InAlAs/InGaAs HBT’s

Abstract

Keywords

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