High-field magnetization of URu2Si2 under high pressure

T. Inoue, K. Kindo, H. Okuni, K. Sugiyama, Y. Haga, E. Yamamoto, T. C. Kobayashi, Y. Uwatoko, Y. Onuki

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The temperature dependence of the magnetic susceptibility and the high-field magnetization up to 55 T are measured for URu2Si2 under high pressures up to 1 GPa. Both Tχ(max) and TN in the susceptibility increase with increasing pressure. The value of the susceptibility below Tχ(max) decreases with increasing pressure. The three high-field metamagnetic transitions at Hc1 = 35.1 T, Hc2 = 36.5 T and Hc3 = 39.6 T at ambient pressure, show different pressure-dependent behaviors. The metamagnetic transition at Hc1 broadens but survives and its transition field increases with increasing pressure. However, the transition at Hc2 is smeared out and disappears above 0.4 GPa. The transition at Hc3 broadens more clearly than the transition at Hc1. The fact that both Tχ(max) and the metamagnetic transition fields increase suggests that the interaction between the f-electrons and the conduction electrons is enhanced by pressure.

Original languageEnglish
Pages (from-to)271-275
Number of pages5
JournalPhysica B: Condensed Matter
Volume294-295
DOIs
Publication statusPublished - Jan 2001
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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