High-energy-resolution photoemission study of CeNiSi2 and CePtSi2

H. Kumigashira, A. Chainani, Takayoshi Yokoya, O. Akaki, T. Takahashi, M. Ito, M. Kasaya, O. Sakai

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We studied the electronic structure of isostructural CeNiSi2 and CePtSi2 using high-resolution low-temperature photoemission spectroscopy. CeNiSi2 is a typical valence fluctuation material, while CePtSi2 is a low Tk(̃10 K) heavy-fermion system. The valence-band spectra show that Ni 3d derived states appear at energies closer to the Fermi level (EF) compared to the Pt 5d derived states. The near-Ef spectra exhibit the characteristic spin-orbit splitting of 4f states (4f5/2 and 4f7/2), with higher 4f5/2 intensity in CeNiSi2 than in CePtSi 2. Numerical simulations based on the single-impurity Anderson model show that the hybridization between the conduction band and f electrons is stronger in CeNiSi2 than in CePtSi2. This is qualitatively understood in terms of proximity of Ni 3d states to the f level. The obtained spectroscopic results were discussed in comparison with transport and magnetic measurements.

Original languageEnglish
Pages (from-to)2565-2568
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume53
Issue number5
Publication statusPublished - 1996
Externally publishedYes

Fingerprint

Fermions
Magnetic variables measurement
Photoemission
Photoelectron spectroscopy
Valence bands
Fermi level
Conduction bands
Electronic structure
Orbits
photoelectric emission
Impurities
valence
heavy fermion systems
Electrons
Computer simulation
magnetic measurement
proximity
conduction bands
electronic structure
orbits

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Kumigashira, H., Chainani, A., Yokoya, T., Akaki, O., Takahashi, T., Ito, M., ... Sakai, O. (1996). High-energy-resolution photoemission study of CeNiSi2 and CePtSi2 . Physical Review B - Condensed Matter and Materials Physics, 53(5), 2565-2568.

High-energy-resolution photoemission study of CeNiSi2 and CePtSi2 . / Kumigashira, H.; Chainani, A.; Yokoya, Takayoshi; Akaki, O.; Takahashi, T.; Ito, M.; Kasaya, M.; Sakai, O.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 53, No. 5, 1996, p. 2565-2568.

Research output: Contribution to journalArticle

Kumigashira, H, Chainani, A, Yokoya, T, Akaki, O, Takahashi, T, Ito, M, Kasaya, M & Sakai, O 1996, 'High-energy-resolution photoemission study of CeNiSi2 and CePtSi2 ', Physical Review B - Condensed Matter and Materials Physics, vol. 53, no. 5, pp. 2565-2568.
Kumigashira, H. ; Chainani, A. ; Yokoya, Takayoshi ; Akaki, O. ; Takahashi, T. ; Ito, M. ; Kasaya, M. ; Sakai, O. / High-energy-resolution photoemission study of CeNiSi2 and CePtSi2 . In: Physical Review B - Condensed Matter and Materials Physics. 1996 ; Vol. 53, No. 5. pp. 2565-2568.
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AU - Ito, M.

AU - Kasaya, M.

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AB - We studied the electronic structure of isostructural CeNiSi2 and CePtSi2 using high-resolution low-temperature photoemission spectroscopy. CeNiSi2 is a typical valence fluctuation material, while CePtSi2 is a low Tk(̃10 K) heavy-fermion system. The valence-band spectra show that Ni 3d derived states appear at energies closer to the Fermi level (EF) compared to the Pt 5d derived states. The near-Ef spectra exhibit the characteristic spin-orbit splitting of 4f states (4f5/2 and 4f7/2), with higher 4f5/2 intensity in CeNiSi2 than in CePtSi 2. Numerical simulations based on the single-impurity Anderson model show that the hybridization between the conduction band and f electrons is stronger in CeNiSi2 than in CePtSi2. This is qualitatively understood in terms of proximity of Ni 3d states to the f level. The obtained spectroscopic results were discussed in comparison with transport and magnetic measurements.

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