This article deals with high efficiency and high accuracy fine boring in a monocrystalline silicon ingot by electrical discharge machining (EDM). In manufacturing process of integrated circuits, a plasma-etching process is used for removing oxidation films. This process has recently been examined for use of monocrystalline silicon as the electrode to minimize the contamination. However, it is difficult to machine silicon accurately by the conventional diamond drilling method, because the material removal is due to brittle fracture. The machining force in the EDM process is very small compared with that in conventional machining, therefore, the possibility of high efficiency and high accuracy boring holes in silicon ingot by EDM is experimentally investigated. The removal rate of monocrystalline silicon by EDM is much higher than that of steel, while the electrode wear is extremely small. The improvement method leads to a better hole without chipping at the exit of hole or sticking of the insulator on the wall of hole. Furthermore, it is proved that even a high aspect ratio of about 200 boring is possible.
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