A high-efficiency uni-travelling carrier (UTC) photodiode was developed using an edge-illuminated refracting-facet photodiode (RFPD) structure. The fabricated UTC-RFPD exhibited a maximum responsivity as high as 0.48 A/W even with a 280-nm-thin absorption layer, and a high output peak-to-peak voltage of 1.5 V at 40 Gbit/s.
|Number of pages||2|
|Publication status||Published - Sept 16 1999|
ASJC Scopus subject areas
- Electrical and Electronic Engineering