High efficiency edge-illuminated uni-travelling-carrier-structure refracting-facet photodiode

H. Fukano, Y. Muramoto, K. Takahata, Y. Matsuoka

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

A high-efficiency uni-travelling carrier (UTC) photodiode was developed using an edge-illuminated refracting-facet photodiode (RFPD) structure. The fabricated UTC-RFPD exhibited a maximum responsivity as high as 0.48 A/W even with a 280-nm-thin absorption layer, and a high output peak-to-peak voltage of 1.5 V at 40 Gbit/s.

Original languageEnglish
Pages (from-to)1664-1665
Number of pages2
JournalElectronics Letters
Volume35
Issue number19
DOIs
Publication statusPublished - Sep 16 1999
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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