High degree reduction and restoration of graphene oxide on SiO2 at low temperature via remote Cu-assisted plasma treatment

Seiji Obata, Minoru Sato, Keishi Akada, Koichiro Saiki

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A high throughput synthesis method of graphene has been required for a long time to apply graphene to industrial applications. Of the various synthesis methods, the chemical exfoliation of graphite via graphene oxide (GO) is advantageous as far as productivity is concerned; however, the quality of the graphene produced by this method is far inferior to that synthesized by other methods, such as chemical vapor deposition on metals. Developing an effective reduction and restoration method for GO on dielectric substrates has been therefore a key issue. Here, we present a method for changing GO deposited on a dielectric substrate into high crystallinity graphene at 550 °C; this method uses CH4/H2 plasma and a Cu catalyst. We found that Cu remotely catalyzed the high degree reduction and restoration of GO on SiO2 and the effect ranged over at least 8 mm. With this method, field-effect transistor devices can be fabricated without any post treatment such as a transfer process. This plasma treatment increased electron and hole mobilities of GO to 480 cm2 V-1 s-1 and 460 cm2 V-1 s-1 respectively; these values were more than 50 times greater than that of conventional reduced GO. Furthermore, the on-site conversion ensured that the shape of the GO sheets remained unchanged after the treatment. This plasma treatment realizes the high throughput synthesis of a desired shaped graphene on any substrate without any residue and damage being caused by the transfer process; as such, it expands the potential applicability of graphene.

Original languageEnglish
Article number245603
JournalNanotechnology
Volume29
Issue number24
DOIs
Publication statusPublished - Apr 16 2018
Externally publishedYes

Fingerprint

Graphite
Oxides
Graphene
Restoration
Plasmas
Temperature
Substrates
Throughput
Hole mobility
Electron mobility
Field effect transistors
Industrial applications
Chemical vapor deposition

Keywords

  • grapheme
  • graphene oxide
  • plasma CVD
  • reduction
  • restoration

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

High degree reduction and restoration of graphene oxide on SiO2 at low temperature via remote Cu-assisted plasma treatment. / Obata, Seiji; Sato, Minoru; Akada, Keishi; Saiki, Koichiro.

In: Nanotechnology, Vol. 29, No. 24, 245603, 16.04.2018.

Research output: Contribution to journalArticle

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