Growth of GaAs epitaxial layers on Si substrate with porous Si intermediate layer by chemical beam epitaxy

Engineering & Materials Science

• Chemical beam epitaxy 96%
• Epitaxial films 80%
• Epilayers 60%
• Photoluminescence 57%
• Chemical mechanical polishing 46%
• Substrates 37%
• Tensile stress 35%
• Surface roughness 29%
• Interferometers 21%
• Thermal stress 17%
• Residual stresses 15%
• Temperature 14%

Chemical Compounds

• Chemical Beam Epitaxy 100%
• Epitaxial Film 75%
• Polishing 40%
• Porosity 30%
• Photoluminescence 27%
• Surface Roughness 17%
• Reduction 16%

Physics & Astronomy

• epitaxy 52%
• polishing 27%
• tensile stress 27%
• photoluminescence 18%
• thermal stresses 14%
• residual stress 12%
• surface roughness 11%
• roughness 10%
• interferometers 10%
• temperature 3%