Growth of AlN film on Mo/SiO2/Si (111) for 5GHz-band FBAR using MOCVD

C. M. Yang, Kazuhiro Uehara, Y. Aota, S. K. Kim, S. Kameda, Y. Nakase, Isota, K. Tsubouchi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We fabricated film-bulk-acoustic resonator with high c-axis oriented AlN film on Mo/SiO2/Si(100) using metalorganic chemical vapor deposition. The resonant frequency and anti-resonant frequency of the fabricated resonator were 3.189GHz and 3.224GHz, respectively. The quality factor and the effective electromechanical coupling coefficient were 24.7 and 2.65%, respectively. The conditions of AlN deposition were substrate temperature of 950°C, pressure of 20Torr, and V-III ratio of 25000. We have successfully grown high c-axis oriented AlN film with 4×10-5Ωcm resistivity of Mo bottom electrode. The full width at half maximum (FWHM) of the AlN(0002) on Mo/SiO2/Si (100) and Mo/SiO2/Si (111) were 4° and 3.8°, respectively. The FWHM values of deposited AlN film are satisfied with the RF band pass filter specification for GHz-band wireless local area network.

Original languageEnglish
Pages (from-to)165-168
Number of pages4
JournalUnknown Journal
Volume1
Publication statusPublished - 2004
Externally publishedYes

Fingerprint

Metallorganic chemical vapor deposition
Full width at half maximum
Natural frequencies
Acoustic resonators
Electromechanical coupling
Bandpass filters
Wireless local area networks (WLAN)
Resonators
Specifications
Electrodes
Substrates
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yang, C. M., Uehara, K., Aota, Y., Kim, S. K., Kameda, S., Nakase, Y., ... Tsubouchi, K. (2004). Growth of AlN film on Mo/SiO2/Si (111) for 5GHz-band FBAR using MOCVD. Unknown Journal, 1, 165-168.

Growth of AlN film on Mo/SiO2/Si (111) for 5GHz-band FBAR using MOCVD. / Yang, C. M.; Uehara, Kazuhiro; Aota, Y.; Kim, S. K.; Kameda, S.; Nakase, Y.; Isota; Tsubouchi, K.

In: Unknown Journal, Vol. 1, 2004, p. 165-168.

Research output: Contribution to journalArticle

Yang, CM, Uehara, K, Aota, Y, Kim, SK, Kameda, S, Nakase, Y, Isota & Tsubouchi, K 2004, 'Growth of AlN film on Mo/SiO2/Si (111) for 5GHz-band FBAR using MOCVD', Unknown Journal, vol. 1, pp. 165-168.
Yang CM, Uehara K, Aota Y, Kim SK, Kameda S, Nakase Y et al. Growth of AlN film on Mo/SiO2/Si (111) for 5GHz-band FBAR using MOCVD. Unknown Journal. 2004;1:165-168.
Yang, C. M. ; Uehara, Kazuhiro ; Aota, Y. ; Kim, S. K. ; Kameda, S. ; Nakase, Y. ; Isota ; Tsubouchi, K. / Growth of AlN film on Mo/SiO2/Si (111) for 5GHz-band FBAR using MOCVD. In: Unknown Journal. 2004 ; Vol. 1. pp. 165-168.
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T1 - Growth of AlN film on Mo/SiO2/Si (111) for 5GHz-band FBAR using MOCVD

AU - Yang, C. M.

AU - Uehara, Kazuhiro

AU - Aota, Y.

AU - Kim, S. K.

AU - Kameda, S.

AU - Nakase, Y.

AU - Isota,

AU - Tsubouchi, K.

PY - 2004

Y1 - 2004

N2 - We fabricated film-bulk-acoustic resonator with high c-axis oriented AlN film on Mo/SiO2/Si(100) using metalorganic chemical vapor deposition. The resonant frequency and anti-resonant frequency of the fabricated resonator were 3.189GHz and 3.224GHz, respectively. The quality factor and the effective electromechanical coupling coefficient were 24.7 and 2.65%, respectively. The conditions of AlN deposition were substrate temperature of 950°C, pressure of 20Torr, and V-III ratio of 25000. We have successfully grown high c-axis oriented AlN film with 4×10-5Ωcm resistivity of Mo bottom electrode. The full width at half maximum (FWHM) of the AlN(0002) on Mo/SiO2/Si (100) and Mo/SiO2/Si (111) were 4° and 3.8°, respectively. The FWHM values of deposited AlN film are satisfied with the RF band pass filter specification for GHz-band wireless local area network.

AB - We fabricated film-bulk-acoustic resonator with high c-axis oriented AlN film on Mo/SiO2/Si(100) using metalorganic chemical vapor deposition. The resonant frequency and anti-resonant frequency of the fabricated resonator were 3.189GHz and 3.224GHz, respectively. The quality factor and the effective electromechanical coupling coefficient were 24.7 and 2.65%, respectively. The conditions of AlN deposition were substrate temperature of 950°C, pressure of 20Torr, and V-III ratio of 25000. We have successfully grown high c-axis oriented AlN film with 4×10-5Ωcm resistivity of Mo bottom electrode. The full width at half maximum (FWHM) of the AlN(0002) on Mo/SiO2/Si (100) and Mo/SiO2/Si (111) were 4° and 3.8°, respectively. The FWHM values of deposited AlN film are satisfied with the RF band pass filter specification for GHz-band wireless local area network.

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