Growth of AlN film on Mo/SiO2/Si (111) for 5GHz-band FBAR using MOCVD

C. M. Yang, K. Uehara, Y. Aota, S. K. Kim, S. Kameda, Y. Nakase, Isota, K. Tsubouchi

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

We fabricated film-bulk-acoustic resonator with high c-axis oriented AlN film on Mo/SiO2/Si(100) using metalorganic chemical vapor deposition. The resonant frequency and anti-resonant frequency of the fabricated resonator were 3.189GHz and 3.224GHz, respectively. The quality factor and the effective electromechanical coupling coefficient were 24.7 and 2.65%, respectively. The conditions of AlN deposition were substrate temperature of 950°C, pressure of 20Torr, and V-III ratio of 25000. We have successfully grown high c-axis oriented AlN film with 4×10-5Ωcm resistivity of Mo bottom electrode. The full width at half maximum (FWHM) of the AlN(0002) on Mo/SiO2/Si (100) and Mo/SiO2/Si (111) were 4° and 3.8°, respectively. The FWHM values of deposited AlN film are satisfied with the RF band pass filter specification for GHz-band wireless local area network.

Original languageEnglish
Pages (from-to)165-168
Number of pages4
JournalProceedings - IEEE Ultrasonics Symposium
Volume1
Publication statusPublished - Dec 1 2004
Externally publishedYes
Event2004 IEEE Ultrasonics Symposium - Montreal, Que., Canada
Duration: Aug 23 2004Aug 27 2004

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

Fingerprint Dive into the research topics of 'Growth of AlN film on Mo/SiO<sub>2</sub>/Si (111) for 5GHz-band FBAR using MOCVD'. Together they form a unique fingerprint.

  • Cite this

    Yang, C. M., Uehara, K., Aota, Y., Kim, S. K., Kameda, S., Nakase, Y., Isota, & Tsubouchi, K. (2004). Growth of AlN film on Mo/SiO2/Si (111) for 5GHz-band FBAR using MOCVD. Proceedings - IEEE Ultrasonics Symposium, 1, 165-168.