Growth and structure of picene thin films on Sio2

R. Kurihara, T. Hosokai, Yoshihiro Kubozono

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Growth and structure of picene thin films on SiO2surfacewere studied from ultrathin film to thick film regimes (nominal film thickness upto 100 nm) by using X-ray diffraction and atomic force microscopy. We found that from initial film growth picene form crystalline grains with a certain multilayer height, in which their crystalline ab-plane orients parallel to the substrate surface. With increasing the film thickness the number of the grains increases with keeping the grain height until the substrate surface is fully covered. These results indicate that picene films exhibit island growth mode on SiO2 surface.

Original languageEnglish
Pages (from-to)83-87
Number of pages5
JournalMolecular Crystals and Liquid Crystals
Volume580
Issue number1
DOIs
Publication statusPublished - Sep 1 2013

Fingerprint

Thin films
Film thickness
film thickness
thin films
Crystalline materials
Ultrathin films
Film growth
Substrates
Thick films
thick films
Atomic force microscopy
Multilayers
atomic force microscopy
X ray diffraction
diffraction
picene
x rays

Keywords

  • Organic semiconductor
  • Structural analysis
  • Thin film growth
  • X-ray diffraction

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Growth and structure of picene thin films on Sio2. / Kurihara, R.; Hosokai, T.; Kubozono, Yoshihiro.

In: Molecular Crystals and Liquid Crystals, Vol. 580, No. 1, 01.09.2013, p. 83-87.

Research output: Contribution to journalArticle

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