Growth and characterization of GaAs epitaxial layers on Si/porous Si/Si substrate by chemical beam epitaxy

S. Saravanan, Y. Hayashi, T. Soga, T. Jimbo, M. Umeno, N. Sato, T. Yonehara

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Abstract

The initial growth of GaAs films on a Si/porous Si/Si (SPS) substrate has been investigated using reflection high-energy electron diffraction. The morphology and the thickness have been examined by a Nomarski optical microscope and scanning electron microscope, respectively. The results of the low temperature photoluminescence studies have shown that a significant reduction in the residual thermal tensile stress can be achieved with reduced growth temperature. The 77 K photoluminescence spectra for GaAs/Si show a strain-induced splitting between the heavy and light hole valence bands which corresponds to a biaxial tensile stress of 2.45 kbar acting on the GaAs layer where the same for GaAs/SPS grown at 450°C is 1.69 kbar. The results have shown that a SPS substrate with the combination of low temperature growth is a promising candidate for obtaining GaAs films with low stress.

Original languageEnglish
Pages (from-to)5215-5218
Number of pages4
JournalJournal of Applied Physics
Volume89
Issue number9
DOIs
Publication statusPublished - May 1 2001
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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