Gate Drivers Techniques and Solutions for GaN HEMTs in High Frequency Applications

Wei Ren Lin, Camilo Suarez, Kazuhiro Umetani, Wilmar Martinez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

With the growth of GaN HEMTs applications in power electronic commercial markets, higher frequency operation became possible allowing different advantages with regards to downsizing of passive components in power converters. High switching and heat performance makes GaN HEMTs a better solution for high power applications. This technology is different from that of conventional Si devices, raising several new challenges to the power converter design procedures. For instance, the effect of the fast transient operation of GaN HEMTs on the operation magnetic components has not been completely understood yet. Consequently, it is important to start analyzing how GaN semiconductors are driven, despite the few gate drivers designed to drive GaN HEMTs. This paper analyzes and summarizes the driving techniques and solutions of E-mode GaN HEMTs and their gate drivers. The commercially products are reviewed. Simulation of E-modes GaN HEMT switching performance is performed and discussed.

Original languageEnglish
Title of host publication2020 IEEE 29th International Symposium on Industrial Electronics, ISIE 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages712-716
Number of pages5
ISBN (Electronic)9781728156354
DOIs
Publication statusPublished - Jun 2020
Event29th IEEE International Symposium on Industrial Electronics, ISIE 2020 - Delft, Netherlands
Duration: Jun 17 2020Jun 19 2020

Publication series

NameIEEE International Symposium on Industrial Electronics
Volume2020-June

Conference

Conference29th IEEE International Symposium on Industrial Electronics, ISIE 2020
CountryNetherlands
CityDelft
Period6/17/206/19/20

Keywords

  • Cascode
  • Enhancement-Mode
  • GaN HEMT
  • Gate Driving Circuit
  • Wide bandgap semiconductors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering

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  • Cite this

    Lin, W. R., Suarez, C., Umetani, K., & Martinez, W. (2020). Gate Drivers Techniques and Solutions for GaN HEMTs in High Frequency Applications. In 2020 IEEE 29th International Symposium on Industrial Electronics, ISIE 2020 - Proceedings (pp. 712-716). [9152415] (IEEE International Symposium on Industrial Electronics; Vol. 2020-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISIE45063.2020.9152415