TY - GEN
T1 - Gate Drivers Techniques and Solutions for GaN HEMTs in High Frequency Applications
AU - Lin, Wei Ren
AU - Suarez, Camilo
AU - Umetani, Kazuhiro
AU - Martinez, Wilmar
PY - 2020/6
Y1 - 2020/6
N2 - With the growth of GaN HEMTs applications in power electronic commercial markets, higher frequency operation became possible allowing different advantages with regards to downsizing of passive components in power converters. High switching and heat performance makes GaN HEMTs a better solution for high power applications. This technology is different from that of conventional Si devices, raising several new challenges to the power converter design procedures. For instance, the effect of the fast transient operation of GaN HEMTs on the operation magnetic components has not been completely understood yet. Consequently, it is important to start analyzing how GaN semiconductors are driven, despite the few gate drivers designed to drive GaN HEMTs. This paper analyzes and summarizes the driving techniques and solutions of E-mode GaN HEMTs and their gate drivers. The commercially products are reviewed. Simulation of E-modes GaN HEMT switching performance is performed and discussed.
AB - With the growth of GaN HEMTs applications in power electronic commercial markets, higher frequency operation became possible allowing different advantages with regards to downsizing of passive components in power converters. High switching and heat performance makes GaN HEMTs a better solution for high power applications. This technology is different from that of conventional Si devices, raising several new challenges to the power converter design procedures. For instance, the effect of the fast transient operation of GaN HEMTs on the operation magnetic components has not been completely understood yet. Consequently, it is important to start analyzing how GaN semiconductors are driven, despite the few gate drivers designed to drive GaN HEMTs. This paper analyzes and summarizes the driving techniques and solutions of E-mode GaN HEMTs and their gate drivers. The commercially products are reviewed. Simulation of E-modes GaN HEMT switching performance is performed and discussed.
KW - Cascode
KW - Enhancement-Mode
KW - GaN HEMT
KW - Gate Driving Circuit
KW - Wide bandgap semiconductors
UR - http://www.scopus.com/inward/record.url?scp=85089549721&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85089549721&partnerID=8YFLogxK
U2 - 10.1109/ISIE45063.2020.9152415
DO - 10.1109/ISIE45063.2020.9152415
M3 - Conference contribution
AN - SCOPUS:85089549721
T3 - IEEE International Symposium on Industrial Electronics
SP - 712
EP - 716
BT - 2020 IEEE 29th International Symposium on Industrial Electronics, ISIE 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 29th IEEE International Symposium on Industrial Electronics, ISIE 2020
Y2 - 17 June 2020 through 19 June 2020
ER -