Fundamental study on setting of diamond abrasive grains using electrostatic force for single-layered metal bond wheel

Ohashi Kazuhito, Kawasuji Yusaku, Shinji Yoshifumi, Samejima Yoshitaka, Ogawa Soma, Tsukamoto Shinya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Single-layered metal bond diamond wheels are useful to high efficient grinding of difficult-to-grind materials because of the high gripping force of abrasive grains and the controllable grain density. In this paper, fundamental information are obtained for an application of electrostatic force to setting of diamond grains into pasted metal bond slurry layer on wheel surface, investigating experimentally jumping phenomenon of diamond grains in an electrostatic field between a electrode plate and metal bond slurry layer. The SD grains and the SDC grains coated with Ti are selected. SDC grains jump into a metal bond layer as quick as making an electrostatic field, however SD grains jump with short time lags. The setting rate of SDC grains is larger than that of SD grains, and setting position accuracy of SDC grain array is better than SD grain array. The possibility of setting abrasive grains into single-layered metal bond diamond wheel surface using electrostatic force is obtained and SDC grains are suitable to the proposed abrasive setting method.

Original languageEnglish
Title of host publicationAdvances in Abrasive Technology XV
Pages40-45
Number of pages6
DOIs
Publication statusPublished - Nov 26 2012
Event15th International Symposium on Advances in Abrasive Technology, ISAAT 2012 - , Singapore
Duration: Sep 25 2012Sep 28 2012

Publication series

NameAdvanced Materials Research
Volume565
ISSN (Print)1022-6680

Other

Other15th International Symposium on Advances in Abrasive Technology, ISAAT 2012
CountrySingapore
Period9/25/129/28/12

Keywords

  • Diamond abrasive grain
  • Electrostatic force
  • Jumping phenomenon
  • Single-layered metal bond wheel

ASJC Scopus subject areas

  • Engineering(all)

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