Full adder operation based on Si nanodot array device

Takuya Kaizawa; Masashi Arita; Akira Fujiwara; Kenji Yamazaki; Yukinori Ono; Hiroshi Inokawa; Yasuo Takahashi

doi:10.1109/SNW.2008.5418457

Full adder operation based on Si nanodot array device

Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Kenji Yamazaki, Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi

Faculty of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate a highly functional Si-nanodot-array device that has three input gates and two output terminals. The device was fabricated on an SOI wafer using Si MOS processes. We confirmed that a single device can operate as both a half adder and a full adder when we carefully select the operation voltages.

Original language	English
Title of host publication	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
DOIs	https://doi.org/10.1109/SNW.2008.5418457
Publication status	Published - Dec 1 2008
Event	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 - Honolulu, HI, United States Duration: Jun 15 2008 → Jun 16 2008

Publication series

Name	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Other

Other	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
Country/Territory	United States
City	Honolulu, HI
Period	6/15/08 → 6/16/08

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/SNW.2008.5418457

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Full adder operation based on Si nanodot array device. / Kaizawa, Takuya; Arita, Masashi; Fujiwara, Akira; Yamazaki, Kenji; Ono, Yukinori; Inokawa, Hiroshi; Takahashi, Yasuo.

IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008. 2008. 5418457 (IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kaizawa, T, Arita, M, Fujiwara, A, Yamazaki, K, Ono, Y, Inokawa, H & Takahashi, Y 2008, Full adder operation based on Si nanodot array device. in IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008., 5418457, IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008, IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008, Honolulu, HI, United States, 6/15/08. https://doi.org/10.1109/SNW.2008.5418457

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abstract = "We demonstrate a highly functional Si-nanodot-array device that has three input gates and two output terminals. The device was fabricated on an SOI wafer using Si MOS processes. We confirmed that a single device can operate as both a half adder and a full adder when we carefully select the operation voltages.",

author = "Takuya Kaizawa and Masashi Arita and Akira Fujiwara and Kenji Yamazaki and Yukinori Ono and Hiroshi Inokawa and Yasuo Takahashi",

year = "2008",

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doi = "10.1109/SNW.2008.5418457",

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AU - Kaizawa, Takuya

AU - Arita, Masashi

AU - Fujiwara, Akira

AU - Yamazaki, Kenji

AU - Ono, Yukinori

AU - Inokawa, Hiroshi

AU - Takahashi, Yasuo

PY - 2008/12/1

Y1 - 2008/12/1

N2 - We demonstrate a highly functional Si-nanodot-array device that has three input gates and two output terminals. The device was fabricated on an SOI wafer using Si MOS processes. We confirmed that a single device can operate as both a half adder and a full adder when we carefully select the operation voltages.

AB - We demonstrate a highly functional Si-nanodot-array device that has three input gates and two output terminals. The device was fabricated on an SOI wafer using Si MOS processes. We confirmed that a single device can operate as both a half adder and a full adder when we carefully select the operation voltages.

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M3 - Conference contribution

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T3 - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

BT - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

T2 - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Y2 - 15 June 2008 through 16 June 2008

ER -

Full adder operation based on Si nanodot array device

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