Formation of thin oxide films on room-temperature silicon (100) by exposure to a neutral beam of hyperthermal atomic and molecular oxygen

Masahito Tagawa, Tatsuhiko Ema, Hiroshi Kinoshita, Nobuo Ohmae, Masataka Umeno, Timothy K. Minton

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

Silicon (100) surfaces at room temperature were oxidized in a hyperthermal beam containing nearly equal fractions of atomic and molecular oxygen. An oxide layer with a terminal thicknes of 4.5 nm was formed on the Si surfaces, and this layer was composed mostly of silicon dioxide (SiO2). However, a significant fraction of suboxide (SiOx, x < 2) was formed at the Si/SiO2 interface, where the intrinsic stress was high. Post annealing in vacuum at 1000°C for 30 min decreased the amount of suboxide and stress at the interface.

Original languageEnglish
Pages (from-to)L1455-L1457
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number12 PART A
DOIs
Publication statusPublished - Dec 1 1998

Keywords

  • Atomic oxygen
  • Neutral beam oxidation
  • Oxidation
  • Room temperature
  • Silicon
  • Silicon dioxide (SiO)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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