Formation of thin oxide films on room-temperature silicon (100) by exposure to a neutral beam of hyperthermal atomic and molecular oxygen

Masahito Tagawa, Tatsuhiko Ema, Hiroshi Kinoshita, Nobuo Ohmae, Masataka Umeno, Timothy K. Minton

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Silicon (100) surfaces at room temperature were oxidized in a hyperthermal beam containing nearly equal fractions of atomic and molecular oxygen. An oxide layer with a terminal thicknes of 4.5 nm was formed on the Si surfaces, and this layer was composed mostly of silicon dioxide (SiO2). However, a significant fraction of suboxide (SiOx, x <2) was formed at the Si/SiO2 interface, where the intrinsic stress was high. Post annealing in vacuum at 1000°C for 30 min decreased the amount of suboxide and stress at the interface.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number12 PART A
Publication statusPublished - Dec 1 1998
Externally publishedYes

Fingerprint

Molecular oxygen
neutral beams
Oxide films
oxide films
Thin films
Silicon
silicon
room temperature
oxygen
Silica
Vacuum
Annealing
silicon dioxide
Temperature
vacuum
annealing
Oxides
oxides

Keywords

  • Atomic oxygen
  • Neutral beam oxidation
  • Oxidation
  • Room temperature
  • Silicon
  • Silicon dioxide (SiO)

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Formation of thin oxide films on room-temperature silicon (100) by exposure to a neutral beam of hyperthermal atomic and molecular oxygen. / Tagawa, Masahito; Ema, Tatsuhiko; Kinoshita, Hiroshi; Ohmae, Nobuo; Umeno, Masataka; Minton, Timothy K.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 37, No. 12 PART A, 01.12.1998.

Research output: Contribution to journalArticle

Tagawa, Masahito ; Ema, Tatsuhiko ; Kinoshita, Hiroshi ; Ohmae, Nobuo ; Umeno, Masataka ; Minton, Timothy K. / Formation of thin oxide films on room-temperature silicon (100) by exposure to a neutral beam of hyperthermal atomic and molecular oxygen. In: Japanese Journal of Applied Physics, Part 2: Letters. 1998 ; Vol. 37, No. 12 PART A.
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AU - Ohmae, Nobuo

AU - Umeno, Masataka

AU - Minton, Timothy K.

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N2 - Silicon (100) surfaces at room temperature were oxidized in a hyperthermal beam containing nearly equal fractions of atomic and molecular oxygen. An oxide layer with a terminal thicknes of 4.5 nm was formed on the Si surfaces, and this layer was composed mostly of silicon dioxide (SiO2). However, a significant fraction of suboxide (SiOx, x <2) was formed at the Si/SiO2 interface, where the intrinsic stress was high. Post annealing in vacuum at 1000°C for 30 min decreased the amount of suboxide and stress at the interface.

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KW - Room temperature

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KW - Silicon dioxide (SiO)

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