Formation of low-resistivity region in p-Si substrate of SiGe/Si episystem by remote-hydrogen plasma treatment

Yoshifumi Yamashita, Yoshifumi Sakamoto, Yoichi Kamiura, Takeshi Ishiyama

Research output: Contribution to journalArticle

Abstract

We have studied effects of hydrogen treatment on the resistivity profile of the SiGe/Si episystem by spreading resistance (SR) method. In this paper, we present experimental findings that hydrogen treatment reduces the resistivity at a specific part in the Si substrate region. This position was confirmed to be under the interface between SiGe and Si that emerged on the bevel surface during hydrogen treatment. We investigated the depth of resistivity-reduced regions which was formed by various hydrogenating conditions and found that the region was extended to the same depth as the penetration depth of hydrogen. We concluded that the low-resistivity region was formed under the influence of hydrogen introduced from bevel surface. We attributed this resistivity reduction to formation of some defects which originally existed at the interface and diffused into Si substrate with hydrogen.

Original languageEnglish
Pages (from-to)218-221
Number of pages4
JournalPhysica B: Condensed Matter
Volume401-402
DOIs
Publication statusPublished - Dec 15 2007

Keywords

  • Hydrogen
  • Interface
  • Resistivity reduction
  • SiGe/Si

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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