Abstract
We have studied effects of hydrogen treatment on the resistivity profile of the SiGe/Si episystem by spreading resistance (SR) method. In this paper, we present experimental findings that hydrogen treatment reduces the resistivity at a specific part in the Si substrate region. This position was confirmed to be under the interface between SiGe and Si that emerged on the bevel surface during hydrogen treatment. We investigated the depth of resistivity-reduced regions which was formed by various hydrogenating conditions and found that the region was extended to the same depth as the penetration depth of hydrogen. We concluded that the low-resistivity region was formed under the influence of hydrogen introduced from bevel surface. We attributed this resistivity reduction to formation of some defects which originally existed at the interface and diffused into Si substrate with hydrogen.
| Original language | English |
|---|---|
| Pages (from-to) | 218-221 |
| Number of pages | 4 |
| Journal | Physica B: Condensed Matter |
| Volume | 401-402 |
| DOIs | |
| Publication status | Published - Dec 15 2007 |
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Keywords
- Hydrogen
- Interface
- Resistivity reduction
- SiGe/Si
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
Cite this
Formation of low-resistivity region in p-Si substrate of SiGe/Si episystem by remote-hydrogen plasma treatment. / Yamashita, Yoshifumi; Sakamoto, Yoshifumi; Kamiura, Yoichi; Ishiyama, Takeshi.
In: Physica B: Condensed Matter, Vol. 401-402, 15.12.2007, p. 218-221.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Formation of low-resistivity region in p-Si substrate of SiGe/Si episystem by remote-hydrogen plasma treatment
AU - Yamashita, Yoshifumi
AU - Sakamoto, Yoshifumi
AU - Kamiura, Yoichi
AU - Ishiyama, Takeshi
PY - 2007/12/15
Y1 - 2007/12/15
N2 - We have studied effects of hydrogen treatment on the resistivity profile of the SiGe/Si episystem by spreading resistance (SR) method. In this paper, we present experimental findings that hydrogen treatment reduces the resistivity at a specific part in the Si substrate region. This position was confirmed to be under the interface between SiGe and Si that emerged on the bevel surface during hydrogen treatment. We investigated the depth of resistivity-reduced regions which was formed by various hydrogenating conditions and found that the region was extended to the same depth as the penetration depth of hydrogen. We concluded that the low-resistivity region was formed under the influence of hydrogen introduced from bevel surface. We attributed this resistivity reduction to formation of some defects which originally existed at the interface and diffused into Si substrate with hydrogen.
AB - We have studied effects of hydrogen treatment on the resistivity profile of the SiGe/Si episystem by spreading resistance (SR) method. In this paper, we present experimental findings that hydrogen treatment reduces the resistivity at a specific part in the Si substrate region. This position was confirmed to be under the interface between SiGe and Si that emerged on the bevel surface during hydrogen treatment. We investigated the depth of resistivity-reduced regions which was formed by various hydrogenating conditions and found that the region was extended to the same depth as the penetration depth of hydrogen. We concluded that the low-resistivity region was formed under the influence of hydrogen introduced from bevel surface. We attributed this resistivity reduction to formation of some defects which originally existed at the interface and diffused into Si substrate with hydrogen.
KW - Hydrogen
KW - Interface
KW - Resistivity reduction
KW - SiGe/Si
UR - http://www.scopus.com/inward/record.url?scp=36049052334&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=36049052334&partnerID=8YFLogxK
U2 - 10.1016/j.physb.2007.08.150
DO - 10.1016/j.physb.2007.08.150
M3 - Article
AN - SCOPUS:36049052334
VL - 401-402
SP - 218
EP - 221
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
ER -