Formation of carbon-related defects during the carbon-enhanced annihilation of thermal donors in silicon

Yoichi Kamiura, Takashi Maeda, Yoshifumi Yamashita, Minoru Nakamura

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We observed that a defect related to carbon and phosphorus was formed during the carbon-enhanced annihilation of thermal donors at 470°C in silicon. We determined, using deep-level transient spectroscopy (DLTS), that the defect has a deep level at Ec - 0.36 eV and its density has positive correlation with carbon and phosphorus densities. The formation rate of the defect is proportional to the phosphorus density. We also observed the 767 meV photoluminescence line (P-line) that had been identified as the complex with a core of interstitial carbon, vacancy and oxygen dimer. We tentatively ascribe the Ec - 0.36 eV defect to the pair of interstitial carbon and substitutional phosphorus.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number2 PART A
Publication statusPublished - Feb 1 1998

Fingerprint

phosphorus
Phosphorus
Silicon
Defects
Carbon
carbon
defects
silicon
interstitials
Deep level transient spectroscopy
Dimers
Vacancies
Photoluminescence
dimers
Hot Temperature
photoluminescence
Oxygen
oxygen
spectroscopy

Keywords

  • Carbon
  • Deep level
  • Defect
  • DLTS
  • Phosphorus
  • Photoluminescence
  • Silicon
  • Thermal donor

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Formation of carbon-related defects during the carbon-enhanced annihilation of thermal donors in silicon. / Kamiura, Yoichi; Maeda, Takashi; Yamashita, Yoshifumi; Nakamura, Minoru.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 37, No. 2 PART A, 01.02.1998.

Research output: Contribution to journalArticle

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AU - Maeda, Takashi

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AU - Nakamura, Minoru

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N2 - We observed that a defect related to carbon and phosphorus was formed during the carbon-enhanced annihilation of thermal donors at 470°C in silicon. We determined, using deep-level transient spectroscopy (DLTS), that the defect has a deep level at Ec - 0.36 eV and its density has positive correlation with carbon and phosphorus densities. The formation rate of the defect is proportional to the phosphorus density. We also observed the 767 meV photoluminescence line (P-line) that had been identified as the complex with a core of interstitial carbon, vacancy and oxygen dimer. We tentatively ascribe the Ec - 0.36 eV defect to the pair of interstitial carbon and substitutional phosphorus.

AB - We observed that a defect related to carbon and phosphorus was formed during the carbon-enhanced annihilation of thermal donors at 470°C in silicon. We determined, using deep-level transient spectroscopy (DLTS), that the defect has a deep level at Ec - 0.36 eV and its density has positive correlation with carbon and phosphorus densities. The formation rate of the defect is proportional to the phosphorus density. We also observed the 767 meV photoluminescence line (P-line) that had been identified as the complex with a core of interstitial carbon, vacancy and oxygen dimer. We tentatively ascribe the Ec - 0.36 eV defect to the pair of interstitial carbon and substitutional phosphorus.

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