Flexible picene thin film field-effect transistors with parylene gate dielectric and their physical properties

Naoko Kawasaki, Wolfgang L. Kalb, Thomas Mathis, Yumiko Kaji, Ryoji Mitsuhashi, Hideki Okamoto, Yasuyuki Sugawara, Akihiko Fujiwara, Yoshihiro Kubozono, Bertram Batlogg

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Flexible picene thin film field-effect transistors (FETs) have been fabricated with parylene gate dielectric on polyethylene terephthalate substrates. The picene thin film FETs show p-channel output/transfer characteristics and the field-effect mobility μ reaches ∼1 cm2 V-1 s-1 in vacuum. The FET shows a clear O2 gas sensing effect and negligible hysteresis in the transfer curves, indicating a possible application of the transistor as O2 selective gas sensor. Furthermore, it has been found that the parylene gate dielectric can eliminate a reduction in on-state drain current caused by continuous bias-voltage application which is observed if a SiO2 gate dielectric is used.

Original languageEnglish
Article number113305
JournalApplied Physics Letters
Volume96
Issue number11
DOIs
Publication statusPublished - Mar 26 2010

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kawasaki, N., Kalb, W. L., Mathis, T., Kaji, Y., Mitsuhashi, R., Okamoto, H., Sugawara, Y., Fujiwara, A., Kubozono, Y., & Batlogg, B. (2010). Flexible picene thin film field-effect transistors with parylene gate dielectric and their physical properties. Applied Physics Letters, 96(11), [113305]. https://doi.org/10.1063/1.3360223