Field-effect transistors with thin films of perylene on Si O2 and polyimide gate insulators

Toshio Ohta, Takayuki Nagano, Kenji Ochi, Yoshihiro Kubozono, Akihiko Fujiwara

    Research output: Contribution to journalArticlepeer-review

    12 Citations (Scopus)

    Abstract

    Field-effect transistor (FET) devices have been fabricated with thin films of perylene on Si O2 and polyimide gate insulators, and p -channel FET properties have been found in both FET devices. The perylene FET devices with Si O2 and polyimide gate insulators exhibited field-effect mobility, μ, values of 7.0× 10-3 and 3.7× 10-4 cm2 V-1 s-1, respectively, at 300 K under vacuum of 10-6 Torr. These FET devices were found to operate under atmospheric condition after exposure to air. The μ value increased with increasing temperature from 160 to 280 K, showing a hopping carrier transport.

    Original languageEnglish
    Article number103506
    JournalApplied Physics Letters
    Volume88
    Issue number10
    DOIs
    Publication statusPublished - 2006

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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