Field-effect transistors with thin films of perylene on Si O2 and polyimide gate insulators

Toshio Ohta; Takayuki Nagano; Kenji Ochi; Yoshihiro Kubozono; Akihiko Fujiwara

doi:10.1063/1.2182024

Field-effect transistors with thin films of perylene on Si O2 and polyimide gate insulators

Toshio Ohta, Takayuki Nagano, Kenji Ochi, Yoshihiro Kubozono, Akihiko Fujiwara

Research Institute for Interdisciplinary Science

Research output: Contribution to journal › Article

12 Citations (Scopus)

Abstract

Field-effect transistor (FET) devices have been fabricated with thin films of perylene on Si O2 and polyimide gate insulators, and p -channel FET properties have been found in both FET devices. The perylene FET devices with Si O2 and polyimide gate insulators exhibited field-effect mobility, μ, values of 7.0× 10-3 and 3.7× 10-4 cm2 V-1 s-1, respectively, at 300 K under vacuum of 10-6 Torr. These FET devices were found to operate under atmospheric condition after exposure to air. The μ value increased with increasing temperature from 160 to 280 K, showing a hopping carrier transport.

Original language	English
Article number	103506
Journal	Applied Physics Letters
Volume	88
Issue number	10
DOIs	https://doi.org/10.1063/1.2182024
Publication status	Published - 2006

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polyimides

field effect transistors

insulators

thin films

meteorology

vacuum

air

temperature

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Ohta, T., Nagano, T., Ochi, K., Kubozono, Y., & Fujiwara, A. (2006). Field-effect transistors with thin films of perylene on Si O2 and polyimide gate insulators. Applied Physics Letters, 88(10), [103506]. https://doi.org/10.1063/1.2182024

Field-effect transistors with thin films of perylene on Si O2 and polyimide gate insulators. / Ohta, Toshio; Nagano, Takayuki; Ochi, Kenji; Kubozono, Yoshihiro; Fujiwara, Akihiko.

In: Applied Physics Letters, Vol. 88, No. 10, 103506, 2006.

Research output: Contribution to journal › Article

Ohta, T, Nagano, T, Ochi, K, Kubozono, Y & Fujiwara, A 2006, 'Field-effect transistors with thin films of perylene on Si O2 and polyimide gate insulators', Applied Physics Letters, vol. 88, no. 10, 103506. https://doi.org/10.1063/1.2182024

Ohta T, Nagano T, Ochi K, Kubozono Y, Fujiwara A. Field-effect transistors with thin films of perylene on Si O2 and polyimide gate insulators. Applied Physics Letters. 2006;88(10). 103506. https://doi.org/10.1063/1.2182024

Ohta, Toshio ; Nagano, Takayuki ; Ochi, Kenji ; Kubozono, Yoshihiro ; Fujiwara, Akihiko. / Field-effect transistors with thin films of perylene on Si O2 and polyimide gate insulators. In: Applied Physics Letters. 2006 ; Vol. 88, No. 10.

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10.1063/1.2182024