Abstract
Field-effect transistor (FET) devices have been fabricated with thin films of perylene on Si O2 and polyimide gate insulators, and p -channel FET properties have been found in both FET devices. The perylene FET devices with Si O2 and polyimide gate insulators exhibited field-effect mobility, μ, values of 7.0× 10-3 and 3.7× 10-4 cm2 V-1 s-1, respectively, at 300 K under vacuum of 10-6 Torr. These FET devices were found to operate under atmospheric condition after exposure to air. The μ value increased with increasing temperature from 160 to 280 K, showing a hopping carrier transport.
| Original language | English |
|---|---|
| Article number | 103506 |
| Journal | Applied Physics Letters |
| Volume | 88 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - Mar 20 2006 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Ohta, T., Nagano, T., Ochi, K., Kubozono, Y., & Fujiwara, A. (2006). Field-effect transistors with thin films of perylene on Si O2 and polyimide gate insulators. Applied Physics Letters, 88(10), [103506]. https://doi.org/10.1063/1.2182024