Field-effect transistors with thin films of perylene on Si O2 and polyimide gate insulators

Toshio Ohta, Takayuki Nagano, Kenji Ochi, Yoshihiro Kubozono, Akihiko Fujiwara

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12 Citations (Scopus)

Abstract

Field-effect transistor (FET) devices have been fabricated with thin films of perylene on Si O2 and polyimide gate insulators, and p -channel FET properties have been found in both FET devices. The perylene FET devices with Si O2 and polyimide gate insulators exhibited field-effect mobility, μ, values of 7.0× 10-3 and 3.7× 10-4 cm2 V-1 s-1, respectively, at 300 K under vacuum of 10-6 Torr. These FET devices were found to operate under atmospheric condition after exposure to air. The μ value increased with increasing temperature from 160 to 280 K, showing a hopping carrier transport.

Original languageEnglish
Article number103506
JournalApplied Physics Letters
Volume88
Issue number10
DOIs
Publication statusPublished - 2006

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polyimides
field effect transistors
insulators
thin films
meteorology
vacuum
air
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Field-effect transistors with thin films of perylene on Si O2 and polyimide gate insulators. / Ohta, Toshio; Nagano, Takayuki; Ochi, Kenji; Kubozono, Yoshihiro; Fujiwara, Akihiko.

In: Applied Physics Letters, Vol. 88, No. 10, 103506, 2006.

Research output: Contribution to journalArticle

Ohta, Toshio ; Nagano, Takayuki ; Ochi, Kenji ; Kubozono, Yoshihiro ; Fujiwara, Akihiko. / Field-effect transistors with thin films of perylene on Si O2 and polyimide gate insulators. In: Applied Physics Letters. 2006 ; Vol. 88, No. 10.
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