TY - JOUR
T1 - Field-effect transistors with thin films of perylene on Si O2 and polyimide gate insulators
AU - Ohta, Toshio
AU - Nagano, Takayuki
AU - Ochi, Kenji
AU - Kubozono, Yoshihiro
AU - Fujiwara, Akihiko
N1 - Funding Information:
This work was supported in part by a Grant-in-Aid (No. 15350089) from MEXT, Japan and by Mitsubishi Foundation.
PY - 2006
Y1 - 2006
N2 - Field-effect transistor (FET) devices have been fabricated with thin films of perylene on Si O2 and polyimide gate insulators, and p -channel FET properties have been found in both FET devices. The perylene FET devices with Si O2 and polyimide gate insulators exhibited field-effect mobility, μ, values of 7.0× 10-3 and 3.7× 10-4 cm2 V-1 s-1, respectively, at 300 K under vacuum of 10-6 Torr. These FET devices were found to operate under atmospheric condition after exposure to air. The μ value increased with increasing temperature from 160 to 280 K, showing a hopping carrier transport.
AB - Field-effect transistor (FET) devices have been fabricated with thin films of perylene on Si O2 and polyimide gate insulators, and p -channel FET properties have been found in both FET devices. The perylene FET devices with Si O2 and polyimide gate insulators exhibited field-effect mobility, μ, values of 7.0× 10-3 and 3.7× 10-4 cm2 V-1 s-1, respectively, at 300 K under vacuum of 10-6 Torr. These FET devices were found to operate under atmospheric condition after exposure to air. The μ value increased with increasing temperature from 160 to 280 K, showing a hopping carrier transport.
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U2 - 10.1063/1.2182024
DO - 10.1063/1.2182024
M3 - Article
AN - SCOPUS:33644884986
VL - 88
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 10
M1 - 103506
ER -