Abstract
A field-effect transistor (FET) using a solid electrolyte is proposed in the present study as a new oxygen sensor. The sensor is fabricated by depositing a thin layer of yttria-stabilized zirconia (YSZ) on a gate insulator of an insulated gate field-effect transistor (IGFET). As an IGFET has an ability to transform impedance, the potential change produced at the interface between the YSZ layer and a platinum gate electrode can be detected stably, even if the impedance of the YSZ is very high. The response of the fabricated sensor showed good reproducibility at 20 °C. A linear relationship between output voltage and logarithmic partial pressure of oxygen was obtained in the range from 0.01 to 1 atm. Sensitivity of the sensor was found to depend on the thickness of the Pt-gate electrode and sputtering conditions of the YSZ layer. Although selectivity to hydrogen and carbon monoxide was not good at room temperature, it could be improved by increasing the operating temperature to 100 °C. The developed sensor has several advantages including small size, low output impedance, and solid-state construction. It is potentially applicable to medical uses, process control, and automobiles.
| Original language | English |
|---|---|
| Pages (from-to) | 2431-2434 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 63 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1988 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Field-effect transistor using a solid electrolyte as a new oxygen sensor. / Miyahara, Yuji; Tsukada, Keiji; Miyagi, Hiroyuki.
In: Journal of Applied Physics, Vol. 63, No. 7, 1988, p. 2431-2434.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Field-effect transistor using a solid electrolyte as a new oxygen sensor
AU - Miyahara, Yuji
AU - Tsukada, Keiji
AU - Miyagi, Hiroyuki
PY - 1988
Y1 - 1988
N2 - A field-effect transistor (FET) using a solid electrolyte is proposed in the present study as a new oxygen sensor. The sensor is fabricated by depositing a thin layer of yttria-stabilized zirconia (YSZ) on a gate insulator of an insulated gate field-effect transistor (IGFET). As an IGFET has an ability to transform impedance, the potential change produced at the interface between the YSZ layer and a platinum gate electrode can be detected stably, even if the impedance of the YSZ is very high. The response of the fabricated sensor showed good reproducibility at 20 °C. A linear relationship between output voltage and logarithmic partial pressure of oxygen was obtained in the range from 0.01 to 1 atm. Sensitivity of the sensor was found to depend on the thickness of the Pt-gate electrode and sputtering conditions of the YSZ layer. Although selectivity to hydrogen and carbon monoxide was not good at room temperature, it could be improved by increasing the operating temperature to 100 °C. The developed sensor has several advantages including small size, low output impedance, and solid-state construction. It is potentially applicable to medical uses, process control, and automobiles.
AB - A field-effect transistor (FET) using a solid electrolyte is proposed in the present study as a new oxygen sensor. The sensor is fabricated by depositing a thin layer of yttria-stabilized zirconia (YSZ) on a gate insulator of an insulated gate field-effect transistor (IGFET). As an IGFET has an ability to transform impedance, the potential change produced at the interface between the YSZ layer and a platinum gate electrode can be detected stably, even if the impedance of the YSZ is very high. The response of the fabricated sensor showed good reproducibility at 20 °C. A linear relationship between output voltage and logarithmic partial pressure of oxygen was obtained in the range from 0.01 to 1 atm. Sensitivity of the sensor was found to depend on the thickness of the Pt-gate electrode and sputtering conditions of the YSZ layer. Although selectivity to hydrogen and carbon monoxide was not good at room temperature, it could be improved by increasing the operating temperature to 100 °C. The developed sensor has several advantages including small size, low output impedance, and solid-state construction. It is potentially applicable to medical uses, process control, and automobiles.
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U2 - 10.1063/1.341038
DO - 10.1063/1.341038
M3 - Article
AN - SCOPUS:33847332007
VL - 63
SP - 2431
EP - 2434
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 7
ER -