Few-layer HfS2 transistors

Toru Kanazawa, Tomohiro Amemiya, Atsushi Ishikawa, Vikrant Upadhyaya, Kenji Tsuruta, Takuo Tanaka, Yasuyuki Miyamoto

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69 Citations (Scopus)

Abstract

HfS2 is the novel transition metal dichalcogenide, which has not been experimentally investigated as the material for electron devices. As per the theoretical calculations, HfS2 has the potential for well-balanced mobility (1,800 cm2/V·s) and bandgap (1.2 eV) and hence it can be a good candidate for realizing low-power devices. In this paper, the fundamental properties of few-layer HfS2 flakes were experimentally evaluated. Micromechanical exfoliation using scotch tape extracted atomically thin HfS2 flakes with varying colour contrasts associated with the number of layers and resonant Raman peaks. We demonstrated the I-V characteristics of the back-gated few-layer (3.8 nm) HfS2 transistor with the robust current saturation. The on/off ratio was more than 10 4 and the maximum drain current of 0.2 μA/μm was observed. Moreover, using the electric double-layer gate structure with LiClO 4:PEO electrolyte, the drain current of the HfS2 transistor significantly increased to 0.75 mA/μm and the mobility was estimated to be 45 cm2/V·s at least. This improved current seemed to indicate superior intrinsic properties of HfS2. These results provides the basic information for the experimental researches of electron devices based on HfS2.

Original languageEnglish
Article number22277
JournalScientific reports
Volume6
DOIs
Publication statusPublished - Mar 1 2016

ASJC Scopus subject areas

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    Kanazawa, T., Amemiya, T., Ishikawa, A., Upadhyaya, V., Tsuruta, K., Tanaka, T., & Miyamoto, Y. (2016). Few-layer HfS2 transistors. Scientific reports, 6, [22277]. https://doi.org/10.1038/srep22277