FeTiO3-α-Fe2O3 solid solution films prepared by a reactive vapor deposition technique

Tatsuo Fujii, Kenji Ayama, Makoto Nakanishi, Jun Takada

Research output: Contribution to journalArticle

Abstract

FeTiO3-α-Fe2O3 solid solution films were epitaxially formed on an α-Al2O3 (001) single crystalline substrate by activated reactive evaporation method. The films prepared at low substrate temperature of 500°C had the corundum structure where Fe and Ti ions occupied the cation sites randomly. While the Fe2-xTixO3 films with x ≥ 0.4 prepared at 700°C had the ilmenite structure where Fe and Ti ions were arranged in order. Only the films with the ordered Fe and Ti ions had large ferrimagnetic moments, though the observed spontaneous magnetization was less than a half of the ideal value expected from the fully ordered ions. Moreover the resistivity of the solid solution films dropped to 10-1Ωcm due to the formation of the mixed valence states between Fe2+ and Fe3+. We revealed this system was one of the candidates for new oxide magnetic semiconductor films.

Original languageEnglish
Pages (from-to)643-647
Number of pages5
JournalFuntai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Volume46
Issue number6
DOIs
Publication statusPublished - Jun 1999

ASJC Scopus subject areas

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering
  • Metals and Alloys
  • Materials Chemistry

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