FeTiO3/Fe2O3 Multilayered Films For New Magnetic Semiconductors Above Room Temperature

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)1309-1315
Number of pages7
JournalAdvances in Science and Technology
VolumeVol.45
Publication statusPublished - 2006

Cite this

FeTiO3/Fe2O3 Multilayered Films For New Magnetic Semiconductors Above Room Temperature. / Fujii, Tatsuo.

In: Advances in Science and Technology, Vol. Vol.45, 2006, p. 1309-1315.

Research output: Contribution to journalArticle

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title = "FeTiO3/Fe2O3 Multilayered Films For New Magnetic Semiconductors Above Room Temperature",
author = "Tatsuo Fujii",
year = "2006",
language = "English",
volume = "Vol.45",
pages = "1309--1315",
journal = "Advances in Science and Technology",

}

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T1 - FeTiO3/Fe2O3 Multilayered Films For New Magnetic Semiconductors Above Room Temperature

AU - Fujii, Tatsuo

PY - 2006

Y1 - 2006

M3 - Article

VL - Vol.45

SP - 1309

EP - 1315

JO - Advances in Science and Technology

JF - Advances in Science and Technology

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