FET hydrogen sensor by direct heating of platinum metal gate for fast response time

Takahiro Okuir, Yuki Usita, Shuzo Takeichi, Kenji Sakai, Toshihiko Kiwa, Keiji Tsukada

Research output: Contribution to journalArticle

Abstract

Improvement of the response time by direct heating of the gate catalytic metal of an FET sensor was investigated. The FET hydrogen sensor that has an adhesion layer (Ti) between the catalytic metal (Pt) and the gate insulator was fabricated. In a previous study, there was a problem in the reproducibility as some of the FET sensors displayed long recovery characteristics caused by hydrogen atoms diffused into the Pt thin film. To improve the response characteristics, two electrodes were connected to the gate metal, then, a pulse current was applied to the gate metal, having a resistance element. When applying the pulse current to the gate portion, desorption of the hydrogen remaining in the platinum thin film was accelerated because the platinum was instantaneously heated. Consequently, the hysteresis of the hydrogen was improved. Furthermore, reproducible response, fast response time and recovery time were achieved.

Original languageEnglish
Pages (from-to)264-269
Number of pages6
JournalIEEJ Transactions on Sensors and Micromachines
Volume134
Issue number8
DOIs
Publication statusPublished - 2014

Fingerprint

Platinum metals
Field effect transistors
Heating
Hydrogen
Sensors
Metals
Platinum
Recovery
Thin films
Chemical elements
Hysteresis
Desorption
Adhesion
Atoms
Electrodes

Keywords

  • Field effect transistor (FET)
  • Hydrogen sensor
  • Metal gate
  • Platinum
  • Response Time

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering

Cite this

FET hydrogen sensor by direct heating of platinum metal gate for fast response time. / Okuir, Takahiro; Usita, Yuki; Takeichi, Shuzo; Sakai, Kenji; Kiwa, Toshihiko; Tsukada, Keiji.

In: IEEJ Transactions on Sensors and Micromachines, Vol. 134, No. 8, 2014, p. 264-269.

Research output: Contribution to journalArticle

@article{07646a30b1684071895a89369393cf3e,
title = "FET hydrogen sensor by direct heating of platinum metal gate for fast response time",
abstract = "Improvement of the response time by direct heating of the gate catalytic metal of an FET sensor was investigated. The FET hydrogen sensor that has an adhesion layer (Ti) between the catalytic metal (Pt) and the gate insulator was fabricated. In a previous study, there was a problem in the reproducibility as some of the FET sensors displayed long recovery characteristics caused by hydrogen atoms diffused into the Pt thin film. To improve the response characteristics, two electrodes were connected to the gate metal, then, a pulse current was applied to the gate metal, having a resistance element. When applying the pulse current to the gate portion, desorption of the hydrogen remaining in the platinum thin film was accelerated because the platinum was instantaneously heated. Consequently, the hysteresis of the hydrogen was improved. Furthermore, reproducible response, fast response time and recovery time were achieved.",
keywords = "Field effect transistor (FET), Hydrogen sensor, Metal gate, Platinum, Response Time",
author = "Takahiro Okuir and Yuki Usita and Shuzo Takeichi and Kenji Sakai and Toshihiko Kiwa and Keiji Tsukada",
year = "2014",
doi = "10.1541/ieejsmas.134.264",
language = "English",
volume = "134",
pages = "264--269",
journal = "IEEJ Transactions on Sensors and Micromachines",
issn = "1341-8939",
publisher = "The Institute of Electrical Engineers of Japan",
number = "8",

}

TY - JOUR

T1 - FET hydrogen sensor by direct heating of platinum metal gate for fast response time

AU - Okuir, Takahiro

AU - Usita, Yuki

AU - Takeichi, Shuzo

AU - Sakai, Kenji

AU - Kiwa, Toshihiko

AU - Tsukada, Keiji

PY - 2014

Y1 - 2014

N2 - Improvement of the response time by direct heating of the gate catalytic metal of an FET sensor was investigated. The FET hydrogen sensor that has an adhesion layer (Ti) between the catalytic metal (Pt) and the gate insulator was fabricated. In a previous study, there was a problem in the reproducibility as some of the FET sensors displayed long recovery characteristics caused by hydrogen atoms diffused into the Pt thin film. To improve the response characteristics, two electrodes were connected to the gate metal, then, a pulse current was applied to the gate metal, having a resistance element. When applying the pulse current to the gate portion, desorption of the hydrogen remaining in the platinum thin film was accelerated because the platinum was instantaneously heated. Consequently, the hysteresis of the hydrogen was improved. Furthermore, reproducible response, fast response time and recovery time were achieved.

AB - Improvement of the response time by direct heating of the gate catalytic metal of an FET sensor was investigated. The FET hydrogen sensor that has an adhesion layer (Ti) between the catalytic metal (Pt) and the gate insulator was fabricated. In a previous study, there was a problem in the reproducibility as some of the FET sensors displayed long recovery characteristics caused by hydrogen atoms diffused into the Pt thin film. To improve the response characteristics, two electrodes were connected to the gate metal, then, a pulse current was applied to the gate metal, having a resistance element. When applying the pulse current to the gate portion, desorption of the hydrogen remaining in the platinum thin film was accelerated because the platinum was instantaneously heated. Consequently, the hysteresis of the hydrogen was improved. Furthermore, reproducible response, fast response time and recovery time were achieved.

KW - Field effect transistor (FET)

KW - Hydrogen sensor

KW - Metal gate

KW - Platinum

KW - Response Time

UR - http://www.scopus.com/inward/record.url?scp=84906572060&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906572060&partnerID=8YFLogxK

U2 - 10.1541/ieejsmas.134.264

DO - 10.1541/ieejsmas.134.264

M3 - Article

AN - SCOPUS:84906572060

VL - 134

SP - 264

EP - 269

JO - IEEJ Transactions on Sensors and Micromachines

JF - IEEJ Transactions on Sensors and Micromachines

SN - 1341-8939

IS - 8

ER -