Ferromagnetism in Cu-doped AlN films

Fan Yong Ran, M. Subramanian, Masaki Tanemura, Yasuhiko Hayashi, Takehiko Hihara

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Abstract

AlN films doped with 3.2-8.2 at % Cu were deposited by helicon magnetron sputtering. The films exhibited ferromagnetism with a Curie temperature above 360 K. The observed magnetic anisotropy and exclusion of ferromagnetic contamination indicated that the ferromagnetism was the intrinsic property of Cu-doped AlN films. Room-temperature (RT) saturation magnetization (M s) tended to decrease with increasing Cu concentration and the maximum RT Ms obtained was about 8.5 emu/ cm3 (0.6 μBCu). Vacuum annealing increased the RT Ms values and meanwhile reduced ratio of N/ (Al+Cu), which suggested that Al interstitial and N vacancy might contribute to the observed ferromagnetic behavior.

Original languageEnglish
Article number112111
JournalApplied Physics Letters
Volume95
Issue number11
DOIs
Publication statusPublished - Oct 5 2009
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Ran, F. Y., Subramanian, M., Tanemura, M., Hayashi, Y., & Hihara, T. (2009). Ferromagnetism in Cu-doped AlN films. Applied Physics Letters, 95(11), [112111]. https://doi.org/10.1063/1.3232238