Fermi surface instability in CeRh2Si2 under pressure

Shingo Araki, R. Settai, Tatsuo Kobayashi, H. Harima, Y. Onuki

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Abstract

That the 4f electrons in the rare-earth antiferromagnetic compound CeRh2Si2 should be considered as localized electrons at cerium sites has been confirmed by comparing a de Haas-van Alphen experiment to the result of energy band calculations for LaRh2Si2. When pressure p is applied to the compound, the Néel temperature TNI=36 K decreases and finally becomes zero at pc≃1.0-1.1 GPa. The topology of the Fermi surface is found to be almost unchanged up to 1.0 GPa, but the cyclotron effective mass increases with increasing pressure. Above 1.1 GPa, the topology of the Fermi surface changes abruptly. A new Fermi surface is explained by the 4f-itinerant-band model. The corresponding cyclotron mass is large, being about 22m0.

Original languageEnglish
Article number224417
Pages (from-to)2244171-2244177
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number22
Publication statusPublished - Dec 1 2001
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

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