Fermi surface in CeRh2Si2 under pressure

Shingo Araki, Miho Nakashima, Rikio Settai, Hisatomo Harima, Yoshichika Onuki

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We observed the de Haas-van Alphen (dHvA) oscillations in CeRh 2Si2 under pressures up to 1.54 GPa. Three dHvA branches at higher pressure than the critical pressure pc≃ 1.06 GPa are well explained by the result of the 4f-itinerant model. Their cyclotron masses are large, being 24mo, 30rao and 31mo, which are about 4 times larger than the corresponding band masses.

Original languageEnglish
Pages (from-to)273-275
Number of pages3
JournalJournal of the Physical Society of Japan
Volume71
Issue numberSUPPL.
Publication statusPublished - 2002
Externally publishedYes

Fingerprint

Fermi surfaces
critical pressure
cyclotrons
oscillations

Keywords

  • CeRhSi
  • DHvA effect
  • Fermi surface
  • Pressure effect
  • Quantum critical point

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Araki, S., Nakashima, M., Settai, R., Harima, H., & Onuki, Y. (2002). Fermi surface in CeRh2Si2 under pressure. Journal of the Physical Society of Japan, 71(SUPPL.), 273-275.

Fermi surface in CeRh2Si2 under pressure. / Araki, Shingo; Nakashima, Miho; Settai, Rikio; Harima, Hisatomo; Onuki, Yoshichika.

In: Journal of the Physical Society of Japan, Vol. 71, No. SUPPL., 2002, p. 273-275.

Research output: Contribution to journalArticle

Araki, S, Nakashima, M, Settai, R, Harima, H & Onuki, Y 2002, 'Fermi surface in CeRh2Si2 under pressure', Journal of the Physical Society of Japan, vol. 71, no. SUPPL., pp. 273-275.
Araki S, Nakashima M, Settai R, Harima H, Onuki Y. Fermi surface in CeRh2Si2 under pressure. Journal of the Physical Society of Japan. 2002;71(SUPPL.):273-275.
Araki, Shingo ; Nakashima, Miho ; Settai, Rikio ; Harima, Hisatomo ; Onuki, Yoshichika. / Fermi surface in CeRh2Si2 under pressure. In: Journal of the Physical Society of Japan. 2002 ; Vol. 71, No. SUPPL. pp. 273-275.
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