Fermi surface in CeRh2Si2 under pressure

Shingo Araki; Miho Nakashima; Rikio Settai; Hisatomo Harima; Yoshichika Onuki

Fermi surface in CeRh₂Si₂ under pressure

Shingo Araki, Miho Nakashima, Rikio Settai, Hisatomo Harima, Yoshichika Onuki

Research output: Contribution to journal › Article › peer-review

Abstract

We observed the de Haas-van Alphen (dHvA) oscillations in CeRh ₂Si₂ under pressures up to 1.54 GPa. Three dHvA branches at higher pressure than the critical pressure p_c≃ 1.06 GPa are well explained by the result of the 4f-itinerant model. Their cyclotron masses are large, being 24mo, 30rao and 31mo, which are about 4 times larger than the corresponding band masses.

Original language	English
Pages (from-to)	273-275
Number of pages	3
Journal	journal of the physical society of japan
Volume	71
Issue number	SUPPL.
Publication status	Published - Dec 1 2002
Externally published	Yes

Keywords

CeRhSi
DHvA effect
Fermi surface
Pressure effect
Quantum critical point

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

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title = "Fermi surface in CeRh2Si2 under pressure",

abstract = "We observed the de Haas-van Alphen (dHvA) oscillations in CeRh 2Si2 under pressures up to 1.54 GPa. Three dHvA branches at higher pressure than the critical pressure pc≃ 1.06 GPa are well explained by the result of the 4f-itinerant model. Their cyclotron masses are large, being 24mo, 30rao and 31mo, which are about 4 times larger than the corresponding band masses.",

keywords = "CeRhSi, DHvA effect, Fermi surface, Pressure effect, Quantum critical point",

author = "Shingo Araki and Miho Nakashima and Rikio Settai and Hisatomo Harima and Yoshichika Onuki",

year = "2002",

month = dec,

day = "1",

language = "English",

volume = "71",

pages = "273--275",

journal = "Journal of the Physical Society of Japan",

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TY - JOUR

T1 - Fermi surface in CeRh2Si2 under pressure

AU - Araki, Shingo

AU - Nakashima, Miho

AU - Settai, Rikio

AU - Harima, Hisatomo

AU - Onuki, Yoshichika

PY - 2002/12/1

Y1 - 2002/12/1

N2 - We observed the de Haas-van Alphen (dHvA) oscillations in CeRh 2Si2 under pressures up to 1.54 GPa. Three dHvA branches at higher pressure than the critical pressure pc≃ 1.06 GPa are well explained by the result of the 4f-itinerant model. Their cyclotron masses are large, being 24mo, 30rao and 31mo, which are about 4 times larger than the corresponding band masses.

AB - We observed the de Haas-van Alphen (dHvA) oscillations in CeRh 2Si2 under pressures up to 1.54 GPa. Three dHvA branches at higher pressure than the critical pressure pc≃ 1.06 GPa are well explained by the result of the 4f-itinerant model. Their cyclotron masses are large, being 24mo, 30rao and 31mo, which are about 4 times larger than the corresponding band masses.

KW - CeRhSi

KW - DHvA effect

KW - Fermi surface

KW - Pressure effect

KW - Quantum critical point

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M3 - Article

AN - SCOPUS:70349436373

SN - 0031-9015

VL - 71

SP - 273

EP - 275

JO - Journal of the Physical Society of Japan

JF - Journal of the Physical Society of Japan

IS - SUPPL.

ER -

Fermi surface in CeRh₂Si₂ under pressure

Abstract

Keywords

ASJC Scopus subject areas

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