Fermi surface in CeRh2Si2 under pressure

Shingo Araki, Miho Nakashima, Rikio Settai, Hisatomo Harima, Yoshichika Onuki

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We observed the de Haas-van Alphen (dHvA) oscillations in CeRh 2Si2 under pressures up to 1.54 GPa. Three dHvA branches at higher pressure than the critical pressure pc≃ 1.06 GPa are well explained by the result of the 4f-itinerant model. Their cyclotron masses are large, being 24mo, 30rao and 31mo, which are about 4 times larger than the corresponding band masses.

Original languageEnglish
Pages (from-to)273-275
Number of pages3
Journaljournal of the physical society of japan
Volume71
Issue numberSUPPL.
Publication statusPublished - Dec 1 2002
Externally publishedYes

Keywords

  • CeRhSi
  • DHvA effect
  • Fermi surface
  • Pressure effect
  • Quantum critical point

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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