Fermi level tuning of Ag-doped Bi 2 Se 3 topological insulator

Eri Uesugi, Takaki Uchiyama, Hidenori Goto, Hiromi Ota, Teppei Ueno, Hirokazu Fujiwara, Kensei Terashima, Takayoshi Yokoya, Fumihiko Matsui, Jun Akimitsu, Kaya Kobayashi, Yoshihiro Kubozono

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Abstract

The temperature dependence of the resistivity (ρ) of Ag-doped Bi 2 Se 3 (Ag x Bi 2−x Se 3 ) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi 2 Se 3 at 1.5–300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi 2 Se 3 can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in Ag x Bi 2−x Se 3 and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of Ag x Bi 2−x Se 3 provides metallic behavior that is similar to that of non-doped Bi 2 Se 3 , indicating a successful upward tuning of the Fermi level.

Original languageEnglish
Article number5376
Pages (from-to)5376
JournalScientific reports
Volume9
Issue number1
DOIs
Publication statusPublished - Mar 29 2019

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Temperature
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Fermi level tuning of Ag-doped Bi 2 Se 3 topological insulator. / Uesugi, Eri; Uchiyama, Takaki; Goto, Hidenori; Ota, Hiromi; Ueno, Teppei; Fujiwara, Hirokazu; Terashima, Kensei; Yokoya, Takayoshi; Matsui, Fumihiko; Akimitsu, Jun; Kobayashi, Kaya; Kubozono, Yoshihiro.

In: Scientific reports, Vol. 9, No. 1, 5376, 29.03.2019, p. 5376.

Research output: Contribution to journalArticle

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abstract = "The temperature dependence of the resistivity (ρ) of Ag-doped Bi 2 Se 3 (Ag x Bi 2−x Se 3 ) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi 2 Se 3 at 1.5–300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi 2 Se 3 can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in Ag x Bi 2−x Se 3 and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of Ag x Bi 2−x Se 3 provides metallic behavior that is similar to that of non-doped Bi 2 Se 3 , indicating a successful upward tuning of the Fermi level.",
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AU - Uesugi, Eri

AU - Uchiyama, Takaki

AU - Goto, Hidenori

AU - Ota, Hiromi

AU - Ueno, Teppei

AU - Fujiwara, Hirokazu

AU - Terashima, Kensei

AU - Yokoya, Takayoshi

AU - Matsui, Fumihiko

AU - Akimitsu, Jun

AU - Kobayashi, Kaya

AU - Kubozono, Yoshihiro

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AB - The temperature dependence of the resistivity (ρ) of Ag-doped Bi 2 Se 3 (Ag x Bi 2−x Se 3 ) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi 2 Se 3 at 1.5–300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi 2 Se 3 can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in Ag x Bi 2−x Se 3 and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of Ag x Bi 2−x Se 3 provides metallic behavior that is similar to that of non-doped Bi 2 Se 3 , indicating a successful upward tuning of the Fermi level.

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