Abstract
We have demonstrated the solution-processed p - and n -type transports including ambipolar transport organic thin-film transistors (OTFTs), required for complementary thin-film integrated circuit technology, by a facile method of blending the n -type C60 and the p -type [poly(2-methoxy-5-[2'-ethyl-hexyloxy]- 1,4-phenylene vinylene] (MEH-PPV). The carrier transport of PPV-based thin-film field-effect transistors with various C60 compositions are investigated by using the field-effect gated structure. One of the important findings is that tunable electronic properties of OTFTs are achieved by controlling C60 composition using a simple and an inexpensive spin-cast technology. The mobility increases with increase in the C60 composition in both n - and p -type OTFTs. Temperature measurements on n -type OTFTs revealed that transport follows a thermally activated hopping transport model with small activation energy.
Original language | English |
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Article number | 052104 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 5 |
DOIs | |
Publication status | Published - Jan 31 2005 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)