Abstract
We have demonstrated the solution-processed p - and n -type transports including ambipolar transport organic thin-film transistors (OTFTs), required for complementary thin-film integrated circuit technology, by a facile method of blending the n -type C60 and the p -type [poly(2-methoxy-5-[2'-ethyl-hexyloxy]- 1,4-phenylene vinylene] (MEH-PPV). The carrier transport of PPV-based thin-film field-effect transistors with various C60 compositions are investigated by using the field-effect gated structure. One of the important findings is that tunable electronic properties of OTFTs are achieved by controlling C60 composition using a simple and an inexpensive spin-cast technology. The mobility increases with increase in the C60 composition in both n - and p -type OTFTs. Temperature measurements on n -type OTFTs revealed that transport follows a thermally activated hopping transport model with small activation energy.
| Original language | English |
|---|---|
| Article number | 052104 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 86 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - Jan 31 2005 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Facile fabrication method for pn -type and ambipolar transport polyphenylenevinylene-based thin-film field-effect transistors by blending C60 fullerene. / Hayashi, Yasuhiko; Kanamori, H.; Yamada, I.; Takasu, A.; Takagi, S.; Kaneko, K.
In: Applied Physics Letters, Vol. 86, No. 5, 052104, 31.01.2005, p. 1-3.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Facile fabrication method for pn -type and ambipolar transport polyphenylenevinylene-based thin-film field-effect transistors by blending C60 fullerene
AU - Hayashi, Yasuhiko
AU - Kanamori, H.
AU - Yamada, I.
AU - Takasu, A.
AU - Takagi, S.
AU - Kaneko, K.
PY - 2005/1/31
Y1 - 2005/1/31
N2 - We have demonstrated the solution-processed p - and n -type transports including ambipolar transport organic thin-film transistors (OTFTs), required for complementary thin-film integrated circuit technology, by a facile method of blending the n -type C60 and the p -type [poly(2-methoxy-5-[2'-ethyl-hexyloxy]- 1,4-phenylene vinylene] (MEH-PPV). The carrier transport of PPV-based thin-film field-effect transistors with various C60 compositions are investigated by using the field-effect gated structure. One of the important findings is that tunable electronic properties of OTFTs are achieved by controlling C60 composition using a simple and an inexpensive spin-cast technology. The mobility increases with increase in the C60 composition in both n - and p -type OTFTs. Temperature measurements on n -type OTFTs revealed that transport follows a thermally activated hopping transport model with small activation energy.
AB - We have demonstrated the solution-processed p - and n -type transports including ambipolar transport organic thin-film transistors (OTFTs), required for complementary thin-film integrated circuit technology, by a facile method of blending the n -type C60 and the p -type [poly(2-methoxy-5-[2'-ethyl-hexyloxy]- 1,4-phenylene vinylene] (MEH-PPV). The carrier transport of PPV-based thin-film field-effect transistors with various C60 compositions are investigated by using the field-effect gated structure. One of the important findings is that tunable electronic properties of OTFTs are achieved by controlling C60 composition using a simple and an inexpensive spin-cast technology. The mobility increases with increase in the C60 composition in both n - and p -type OTFTs. Temperature measurements on n -type OTFTs revealed that transport follows a thermally activated hopping transport model with small activation energy.
UR - http://www.scopus.com/inward/record.url?scp=18644375417&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=18644375417&partnerID=8YFLogxK
U2 - 10.1063/1.1861115
DO - 10.1063/1.1861115
M3 - Article
AN - SCOPUS:18644375417
VL - 86
SP - 1
EP - 3
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 5
M1 - 052104
ER -