Facile fabrication method for pn -type and ambipolar transport polyphenylenevinylene-based thin-film field-effect transistors by blending C60 fullerene

Yasuhiko Hayashi, H. Kanamori, I. Yamada, A. Takasu, S. Takagi, K. Kaneko

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

We have demonstrated the solution-processed p - and n -type transports including ambipolar transport organic thin-film transistors (OTFTs), required for complementary thin-film integrated circuit technology, by a facile method of blending the n -type C60 and the p -type [poly(2-methoxy-5-[2'-ethyl-hexyloxy]- 1,4-phenylene vinylene] (MEH-PPV). The carrier transport of PPV-based thin-film field-effect transistors with various C60 compositions are investigated by using the field-effect gated structure. One of the important findings is that tunable electronic properties of OTFTs are achieved by controlling C60 composition using a simple and an inexpensive spin-cast technology. The mobility increases with increase in the C60 composition in both n - and p -type OTFTs. Temperature measurements on n -type OTFTs revealed that transport follows a thermally activated hopping transport model with small activation energy.

Original languageEnglish
Article number052104
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number5
DOIs
Publication statusPublished - Jan 31 2005
Externally publishedYes

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fullerenes
field effect transistors
fabrication
transistors
thin films
integrated circuits
temperature measurement
casts
activation energy
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Facile fabrication method for pn -type and ambipolar transport polyphenylenevinylene-based thin-film field-effect transistors by blending C60 fullerene. / Hayashi, Yasuhiko; Kanamori, H.; Yamada, I.; Takasu, A.; Takagi, S.; Kaneko, K.

In: Applied Physics Letters, Vol. 86, No. 5, 052104, 31.01.2005, p. 1-3.

Research output: Contribution to journalArticle

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