Abstract
In conclusion, we demonstrated the fabrication and I-V characteristics of HfS2 FETs. For the channel thickness of less than 7.5 nm, a clear saturation behavior and drain current of 0.2 μA/μm were observed with reasonably good on/off current ratio. These results provide basic knowledge of HfS2 as a channel material for FET.
Original language | English |
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Title of host publication | Device Research Conference - Conference Digest, DRC |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 217-218 |
Number of pages | 2 |
Volume | 2015-August |
ISBN (Print) | 9781467381345 |
DOIs | |
Publication status | Published - Aug 3 2015 |
Event | 73rd Annual Device Research Conference, DRC 2015 - Columbus, United States Duration: Jun 21 2015 → Jun 24 2015 |
Other
Other | 73rd Annual Device Research Conference, DRC 2015 |
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Country/Territory | United States |
City | Columbus |
Period | 6/21/15 → 6/24/15 |
Keywords
- Aluminum oxide
- Field effect transistors
- Gold
- Logic gates
- Photonic band gap
- Silicon
- Substrates
ASJC Scopus subject areas
- Electrical and Electronic Engineering