Fabrication of thin-film HfS2 FET

T. Kanazawa; T. Amemiya; A. Ishikawa; V. Upadhyaya; K. Tsuruta; T. Tanaka; Y. Miyamoto

doi:10.1109/DRC.2015.7175643

Fabrication of thin-film HfS₂ FET

T. Kanazawa, T. Amemiya, A. Ishikawa, V. Upadhyaya, K. Tsuruta, T. Tanaka, Y. Miyamoto

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

In conclusion, we demonstrated the fabrication and I-V characteristics of HfS₂ FETs. For the channel thickness of less than 7.5 nm, a clear saturation behavior and drain current of 0.2 μA/μm were observed with reasonably good on/off current ratio. These results provide basic knowledge of HfS₂ as a channel material for FET.

Original language	English
Title of host publication	Device Research Conference - Conference Digest, DRC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	217-218
Number of pages	2
Volume	2015-August
ISBN (Print)	9781467381345
DOIs	https://doi.org/10.1109/DRC.2015.7175643
Publication status	Published - Aug 3 2015
Event	73rd Annual Device Research Conference, DRC 2015 - Columbus, United States Duration: Jun 21 2015 → Jun 24 2015

Other

Other	73rd Annual Device Research Conference, DRC 2015
Country/Territory	United States
City	Columbus
Period	6/21/15 → 6/24/15

Keywords

Aluminum oxide
Field effect transistors
Gold
Logic gates
Photonic band gap
Silicon
Substrates

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2015.7175643

Cite this

Kanazawa, T, Amemiya, T, Ishikawa, A, Upadhyaya, V, Tsuruta, K, Tanaka, T & Miyamoto, Y 2015, Fabrication of thin-film HfS₂ FET. in Device Research Conference - Conference Digest, DRC. vol. 2015-August, 7175643, Institute of Electrical and Electronics Engineers Inc., pp. 217-218, 73rd Annual Device Research Conference, DRC 2015, Columbus, United States, 6/21/15. https://doi.org/10.1109/DRC.2015.7175643

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title = "Fabrication of thin-film HfS2 FET",

abstract = "In conclusion, we demonstrated the fabrication and I-V characteristics of HfS2 FETs. For the channel thickness of less than 7.5 nm, a clear saturation behavior and drain current of 0.2 μA/μm were observed with reasonably good on/off current ratio. These results provide basic knowledge of HfS2 as a channel material for FET.",

keywords = "Aluminum oxide, Field effect transistors, Gold, Logic gates, Photonic band gap, Silicon, Substrates",

author = "T. Kanazawa and T. Amemiya and A. Ishikawa and V. Upadhyaya and K. Tsuruta and T. Tanaka and Y. Miyamoto",

year = "2015",

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doi = "10.1109/DRC.2015.7175643",

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AU - Kanazawa, T.

AU - Amemiya, T.

AU - Ishikawa, A.

AU - Upadhyaya, V.

AU - Tsuruta, K.

AU - Tanaka, T.

AU - Miyamoto, Y.

PY - 2015/8/3

Y1 - 2015/8/3

N2 - In conclusion, we demonstrated the fabrication and I-V characteristics of HfS2 FETs. For the channel thickness of less than 7.5 nm, a clear saturation behavior and drain current of 0.2 μA/μm were observed with reasonably good on/off current ratio. These results provide basic knowledge of HfS2 as a channel material for FET.

AB - In conclusion, we demonstrated the fabrication and I-V characteristics of HfS2 FETs. For the channel thickness of less than 7.5 nm, a clear saturation behavior and drain current of 0.2 μA/μm were observed with reasonably good on/off current ratio. These results provide basic knowledge of HfS2 as a channel material for FET.

KW - Aluminum oxide

KW - Field effect transistors

KW - Gold

KW - Logic gates

KW - Photonic band gap

KW - Silicon

KW - Substrates

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