Fabrication of thin-film HfS2 FET

T. Kanazawa, T. Amemiya, A. Ishikawa, V. Upadhyaya, Kenji Tsuruta, T. Tanaka, Y. Miyamoto

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

In conclusion, we demonstrated the fabrication and I-V characteristics of HfS2 FETs. For the channel thickness of less than 7.5 nm, a clear saturation behavior and drain current of 0.2 μA/μm were observed with reasonably good on/off current ratio. These results provide basic knowledge of HfS2 as a channel material for FET.

Original languageEnglish
Title of host publicationDevice Research Conference - Conference Digest, DRC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages217-218
Number of pages2
Volume2015-August
ISBN (Print)9781467381345
DOIs
Publication statusPublished - Aug 3 2015
Event73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
Duration: Jun 21 2015 → Jun 24 2015

Other

Other73rd Annual Device Research Conference, DRC 2015
CountryUnited States
CityColumbus
Period6/21/15 → 6/24/15

Fingerprint

Field effect transistors
Fabrication
Thin films
Drain current

Keywords

  • Aluminum oxide
  • Field effect transistors
  • Gold
  • Logic gates
  • Photonic band gap
  • Silicon
  • Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kanazawa, T., Amemiya, T., Ishikawa, A., Upadhyaya, V., Tsuruta, K., Tanaka, T., & Miyamoto, Y. (2015). Fabrication of thin-film HfS2 FET. In Device Research Conference - Conference Digest, DRC (Vol. 2015-August, pp. 217-218). [7175643] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2015.7175643

Fabrication of thin-film HfS2 FET. / Kanazawa, T.; Amemiya, T.; Ishikawa, A.; Upadhyaya, V.; Tsuruta, Kenji; Tanaka, T.; Miyamoto, Y.

Device Research Conference - Conference Digest, DRC. Vol. 2015-August Institute of Electrical and Electronics Engineers Inc., 2015. p. 217-218 7175643.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kanazawa, T, Amemiya, T, Ishikawa, A, Upadhyaya, V, Tsuruta, K, Tanaka, T & Miyamoto, Y 2015, Fabrication of thin-film HfS2 FET. in Device Research Conference - Conference Digest, DRC. vol. 2015-August, 7175643, Institute of Electrical and Electronics Engineers Inc., pp. 217-218, 73rd Annual Device Research Conference, DRC 2015, Columbus, United States, 6/21/15. https://doi.org/10.1109/DRC.2015.7175643
Kanazawa T, Amemiya T, Ishikawa A, Upadhyaya V, Tsuruta K, Tanaka T et al. Fabrication of thin-film HfS2 FET. In Device Research Conference - Conference Digest, DRC. Vol. 2015-August. Institute of Electrical and Electronics Engineers Inc. 2015. p. 217-218. 7175643 https://doi.org/10.1109/DRC.2015.7175643
Kanazawa, T. ; Amemiya, T. ; Ishikawa, A. ; Upadhyaya, V. ; Tsuruta, Kenji ; Tanaka, T. ; Miyamoto, Y. / Fabrication of thin-film HfS2 FET. Device Research Conference - Conference Digest, DRC. Vol. 2015-August Institute of Electrical and Electronics Engineers Inc., 2015. pp. 217-218
@inproceedings{7944a46f9a404b9b874b8d8418dfc5a9,
title = "Fabrication of thin-film HfS2 FET",
abstract = "In conclusion, we demonstrated the fabrication and I-V characteristics of HfS2 FETs. For the channel thickness of less than 7.5 nm, a clear saturation behavior and drain current of 0.2 μA/μm were observed with reasonably good on/off current ratio. These results provide basic knowledge of HfS2 as a channel material for FET.",
keywords = "Aluminum oxide, Field effect transistors, Gold, Logic gates, Photonic band gap, Silicon, Substrates",
author = "T. Kanazawa and T. Amemiya and A. Ishikawa and V. Upadhyaya and Kenji Tsuruta and T. Tanaka and Y. Miyamoto",
year = "2015",
month = "8",
day = "3",
doi = "10.1109/DRC.2015.7175643",
language = "English",
isbn = "9781467381345",
volume = "2015-August",
pages = "217--218",
booktitle = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Fabrication of thin-film HfS2 FET

AU - Kanazawa, T.

AU - Amemiya, T.

AU - Ishikawa, A.

AU - Upadhyaya, V.

AU - Tsuruta, Kenji

AU - Tanaka, T.

AU - Miyamoto, Y.

PY - 2015/8/3

Y1 - 2015/8/3

N2 - In conclusion, we demonstrated the fabrication and I-V characteristics of HfS2 FETs. For the channel thickness of less than 7.5 nm, a clear saturation behavior and drain current of 0.2 μA/μm were observed with reasonably good on/off current ratio. These results provide basic knowledge of HfS2 as a channel material for FET.

AB - In conclusion, we demonstrated the fabrication and I-V characteristics of HfS2 FETs. For the channel thickness of less than 7.5 nm, a clear saturation behavior and drain current of 0.2 μA/μm were observed with reasonably good on/off current ratio. These results provide basic knowledge of HfS2 as a channel material for FET.

KW - Aluminum oxide

KW - Field effect transistors

KW - Gold

KW - Logic gates

KW - Photonic band gap

KW - Silicon

KW - Substrates

UR - http://www.scopus.com/inward/record.url?scp=84957712713&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84957712713&partnerID=8YFLogxK

U2 - 10.1109/DRC.2015.7175643

DO - 10.1109/DRC.2015.7175643

M3 - Conference contribution

AN - SCOPUS:84957712713

SN - 9781467381345

VL - 2015-August

SP - 217

EP - 218

BT - Device Research Conference - Conference Digest, DRC

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

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