Fabrication of thin-film HfS2 FET

T. Kanazawa, T. Amemiya, A. Ishikawa, V. Upadhyaya, K. Tsuruta, T. Tanaka, Y. Miyamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


In conclusion, we demonstrated the fabrication and I-V characteristics of HfS2 FETs. For the channel thickness of less than 7.5 nm, a clear saturation behavior and drain current of 0.2 μA/μm were observed with reasonably good on/off current ratio. These results provide basic knowledge of HfS2 as a channel material for FET.

Original languageEnglish
Title of host publicationDevice Research Conference - Conference Digest, DRC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Print)9781467381345
Publication statusPublished - Aug 3 2015
Event73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
Duration: Jun 21 2015Jun 24 2015


Other73rd Annual Device Research Conference, DRC 2015
Country/TerritoryUnited States


  • Aluminum oxide
  • Field effect transistors
  • Gold
  • Logic gates
  • Photonic band gap
  • Silicon
  • Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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