Fabrication of thin-film HfS2 FET

T. Kanazawa, T. Amemiya, A. Ishikawa, V. Upadhyaya, Kenji Tsuruta, T. Tanaka, Y. Miyamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In conclusion, we demonstrated the fabrication and I-V characteristics of HfS2 FETs. For the channel thickness of less than 7.5 nm, a clear saturation behavior and drain current of 0.2 μA/μm were observed with reasonably good on/off current ratio. These results provide basic knowledge of HfS2 as a channel material for FET.

Original languageEnglish
Title of host publicationDevice Research Conference - Conference Digest, DRC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages217-218
Number of pages2
Volume2015-August
ISBN (Print)9781467381345
DOIs
Publication statusPublished - Aug 3 2015
Event73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
Duration: Jun 21 2015Jun 24 2015

Other

Other73rd Annual Device Research Conference, DRC 2015
CountryUnited States
CityColumbus
Period6/21/156/24/15

Keywords

  • Aluminum oxide
  • Field effect transistors
  • Gold
  • Logic gates
  • Photonic band gap
  • Silicon
  • Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Kanazawa, T., Amemiya, T., Ishikawa, A., Upadhyaya, V., Tsuruta, K., Tanaka, T., & Miyamoto, Y. (2015). Fabrication of thin-film HfS2 FET. In Device Research Conference - Conference Digest, DRC (Vol. 2015-August, pp. 217-218). [7175643] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2015.7175643