Fabrication of single-electron transistors and circuits using SOIs

Yukinori Ono, Kenji Yamazaki, Masao Nagase, Seiji Horiguchi, Kenji Shiraishi, Yasuo Takahashi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The paper describes the fabrication of single-electron transistors and circuits using silicon-on-insulators (SOIs). We first point out that control of the oxidation of Si is quite important and could be the key to the fabrication of quantum devices including single-electron devices. We then introduce our technique for making single-electron transistors, which uses special phenomena that occur during the oxidation of SOIs, and show that the technique enables us to realize primary single-electron circuits as a result of its high controllability, reproducibility and thermal stability.

Original languageEnglish
Pages (from-to)1723-1727
Number of pages5
JournalSolid-State Electronics
Volume46
Issue number11
DOIs
Publication statusPublished - Nov 2002
Externally publishedYes

Fingerprint

Single electron transistors
single electron transistors
Silicon
insulators
Electron devices
Fabrication
Oxidation
oxidation
fabrication
Networks (circuits)
controllability
silicon
Controllability
Thermodynamic stability
electrons
thermal stability
Electrons

Keywords

  • Inverter
  • Oxidation
  • Quantum device
  • Silicon-on-insulator
  • Single-electron transistor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Ono, Y., Yamazaki, K., Nagase, M., Horiguchi, S., Shiraishi, K., & Takahashi, Y. (2002). Fabrication of single-electron transistors and circuits using SOIs. Solid-State Electronics, 46(11), 1723-1727. https://doi.org/10.1016/S0038-1101(02)00141-7

Fabrication of single-electron transistors and circuits using SOIs. / Ono, Yukinori; Yamazaki, Kenji; Nagase, Masao; Horiguchi, Seiji; Shiraishi, Kenji; Takahashi, Yasuo.

In: Solid-State Electronics, Vol. 46, No. 11, 11.2002, p. 1723-1727.

Research output: Contribution to journalArticle

Ono, Y, Yamazaki, K, Nagase, M, Horiguchi, S, Shiraishi, K & Takahashi, Y 2002, 'Fabrication of single-electron transistors and circuits using SOIs', Solid-State Electronics, vol. 46, no. 11, pp. 1723-1727. https://doi.org/10.1016/S0038-1101(02)00141-7
Ono Y, Yamazaki K, Nagase M, Horiguchi S, Shiraishi K, Takahashi Y. Fabrication of single-electron transistors and circuits using SOIs. Solid-State Electronics. 2002 Nov;46(11):1723-1727. https://doi.org/10.1016/S0038-1101(02)00141-7
Ono, Yukinori ; Yamazaki, Kenji ; Nagase, Masao ; Horiguchi, Seiji ; Shiraishi, Kenji ; Takahashi, Yasuo. / Fabrication of single-electron transistors and circuits using SOIs. In: Solid-State Electronics. 2002 ; Vol. 46, No. 11. pp. 1723-1727.
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