Fabrication of single-electron transistors and circuits using SOIs

Yukinori Ono, Kenji Yamazaki, Masao Nagase, Seiji Horiguchi, Kenji Shiraishi, Yasuo Takahashi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The paper describes the fabrication of single-electron transistors and circuits using silicon-on-insulators (SOIs). We first point out that control of the oxidation of Si is quite important and could be the key to the fabrication of quantum devices including single-electron devices. We then introduce our technique for making single-electron transistors, which uses special phenomena that occur during the oxidation of SOIs, and show that the technique enables us to realize primary single-electron circuits as a result of its high controllability, reproducibility and thermal stability.

Original languageEnglish
Pages (from-to)1723-1727
Number of pages5
JournalSolid-State Electronics
Volume46
Issue number11
DOIs
Publication statusPublished - Nov 1 2002

Keywords

  • Inverter
  • Oxidation
  • Quantum device
  • Silicon-on-insulator
  • Single-electron transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Fabrication of single-electron transistors and circuits using SOIs'. Together they form a unique fingerprint.

  • Cite this

    Ono, Y., Yamazaki, K., Nagase, M., Horiguchi, S., Shiraishi, K., & Takahashi, Y. (2002). Fabrication of single-electron transistors and circuits using SOIs. Solid-State Electronics, 46(11), 1723-1727. https://doi.org/10.1016/S0038-1101(02)00141-7