Single-electron transistors (SETs) with precise dimensions were fabricated by e-beam nanolithography in combination with hydrogen silsesquioxane (HSQ) resist, which provides both high resolution and a small line-edge roughness. Measurement of the electrical characteristics of the SETs revealed the range of wire size that yields clear oscillations. Furthermore, it was found that a relatively long oxidation time widens the range of wire widths for which clear SET oscillations are observed. Moreover, it was demonstrated experimentally that gate capacitance is proportional to nanowire length.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Issue number||1 SPEC.|
|Publication status||Published - Jan 1 2003|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering