Fabrication of Si single-electron transistors with precise dimensions by electron-beam nanolithography

H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, S. Horiguchi

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

Single-electron transistors (SETs) with precise dimensions were fabricated by e-beam nanolithography in combination with hydrogen silsesquioxane (HSQ) resist, which provides both high resolution and a small line-edge roughness. Measurement of the electrical characteristics of the SETs revealed the range of wire size that yields clear oscillations. Furthermore, it was found that a relatively long oxidation time widens the range of wire widths for which clear SET oscillations are observed. Moreover, it was demonstrated experimentally that gate capacitance is proportional to nanowire length.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number1 SPEC.
DOIs
Publication statusPublished - Jan 1 2003

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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