Fabrication of nanomechanical structures from bulk-gaas using angled ion etching

Vijay K. Singh, Kenji Yamazaki, Takehiko Tawara, Hajime Okamoto, Hiroshi Yamaguchi

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We demonstrate a novel fabrication technique for making nanomechanical structures from bulk materials with no sacrificial layer. Angled ion etching is used to suspend single- and double-clamped beams from GaAs initially. Both beams are fabricated successfully by dry anisotropic ion etching. Resonance characteristics of the fabricated beams are also investigated from 300 to 15 K. A quality factor Q of 5700 is obtained at 40 K, showing a high mechanical reliability. This technique does not rely on conventional sacrificial etching and will enable us to fabricate electro-mechanical structures from a large number of bulk materials in the micro/nano electro mechanical systems (MEMS/NEMS) field.

Original languageEnglish
Article number065001
JournalApplied Physics Express
Issue number6
Publication statusPublished - Jun 2009
Externally publishedYes


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Singh, V. K., Yamazaki, K., Tawara, T., Okamoto, H., & Yamaguchi, H. (2009). Fabrication of nanomechanical structures from bulk-gaas using angled ion etching. Applied Physics Express, 2(6), [065001]. https://doi.org/10.1143/APEX.2.065001